25A SCRs. JCT825C Datasheet

JCT825C SCRs. Datasheet pdf. Equivalent


Part JCT825C
Description 25A SCRs
Feature JIEJIE MICROELECTRONICS CO. , Ltd JCT625/825 Series 25A SCRs Rev.3.0 DESCRIPTION: JCT625/825 seri.
Manufacture JIEJIE
Datasheet
Download JCT825C Datasheet


JIEJIE MICROELECTRONICS CO. , Ltd JCT625/825 Series 25A SCR JCT825C Datasheet
Recommendation Recommendation Datasheet JCT825C Datasheet




JCT825C
JIEJIE MICROELECTRONICS CO. , Ltd
JCT625/825 Series 25A SCRs
Rev.3.0
DESCRIPTION:
JCT625/825 series of silicon controlled rectifiers, with
high ability to withstand the shock loading of large
current, provide high dv/dt rate with strong resistance
to electromagnetic interference. They are especially
recommended for use on solid state relay, motorcycle,
power charger, T-tools etc.
JCTx25A provides insulation voltage rated at 2500V
RMS and JCTx25F/JCTx25FP provides insulation
voltage rated at 2000V RMS from all three terminals
to external heatsink. JCTx25A/JCTx25F series
comply with UL standards (File ref: E252906).
MAIN FEATURES
1 2 3 TO-220A 1 2 3 TO-220B
Insulated
Non-Insulated
123
TO-220C 1 2 3 TO-220F
Insulated
K(1)
G(3)
1 2 3 TO-220FP
Insulated
A(2)
Symbol
VDRM/ VRRM
IT(RMS)
IGT
JCT625
600V
25A
40mA
JCT825
800V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range
Repetitive peak off-state voltage(Tj=25)
Repetitive peak reverse voltage(Tj=25)
Tj
VDRM
VRRM
Non repetitive surge peak Off-state voltage
VDSM
Non repetitive peak reverse voltage
RMS on-state
current
TO-220A(Ins)/
TO-220F(Ins) /
TO-220FP(Ins) (TC=85)
TO-220B(Non-Ins)/
TO-220C(TC=100)
VRSM
IT(RMS)
TEL+86-513-83639777
- 1 / 6-
Value
-40-150
-40-125
600/800
600/800
VDRM +100
VRRM +100
Unit
V
V
V
V
25 A
http://www.jjwdz.com



JCT825C
JCT625/825 Series
JieJie Microelectronics CO. , Ltd
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
ITSM
I2t
dI/dt
IGM
300 A
450 A2s
50 As
4A
Average gate power dissipation
PG(AV)
1
W
Peak gate power
PGM 5 W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT VD=12V RL=33Ω
VGT
VGD VD=VDRM Tj=125RL=3.3KΩ
- - 40
- - 1.3
0.2 -
-
IL IG=1.2IGT
- - 90
IH IT=500mA
- - 50
dV/dt VD=2/3VDRM Gate Open Tj=1251000
-
-
Unit
mA
V
V
mA
mA
Vs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=50A tp=380μs
Tj=25
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25
Tj=125
Value(MAX)
1.6
10
4
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c) junction to case(AC)
TO-220A(Ins)/
TO-220F(Ins)/
TO-220FP(Ins)
TO-220B(Non-Ins)/
TO-220C
Value
1.9
1.0
Unit
/W
TEL+86-513-83639777
- 2 / 6-
http://www.jjwdz.com







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