30A SCRs. JCT630 Datasheet

JCT630 SCRs. Datasheet pdf. Equivalent


Part JCT630
Description 30A SCRs
Feature JIEJIE MICROELECTRONICS CO. , Ltd JCT630/830 Series 30A SCRs Rev.3.0 DESCRIPTION: JCT630/830 ser.
Manufacture JIEJIE
Datasheet
Download JCT630 Datasheet


JIEJIE MICROELECTRONICS CO. , Ltd JCT630/830 Series 30A SCR JCT630 Datasheet
JIEJIE MICROELECTRONICS CO. , Ltd JCT630/830 Series 30A SCR JCT630A Datasheet
JIEJIE MICROELECTRONICS CO. , Ltd JCT630/830 Series 30A SCR JCT630F Datasheet
Recommendation Recommendation Datasheet JCT630 Datasheet




JCT630
JIEJIE MICROELECTRONICS CO. , Ltd
JCT630/830 Series 30A SCRs
Rev.3.0
DESCRIPTION:
JCT630/830 series of silicon controlled rectifiers,
with high ability to withstand the shock loading of
large current, provide high dv/dt rate with strong
resistance to electromagnetic interference. They
are especially recommended for use on solid state
relay, motorcycle, power charger, T-tools etc.
JCTx30A provides insulation voltage rated at 2500V
RMS and JCTx30F provides insulation voltage rated
at 2000V RMS from all three terminals to external
heatsink. JCTx30A/JCTx30F series comply with UL
standards (File ref: E252906).
1 2 3 TO-220A 1 2 3 TO-220B
Insulated
Non-Insulated
1 2 3 TO-220F
Insulated
A(2) K(1)
G(3)
MAIN FEATURES
Symbol
VDRM/ VRRM
IT(RMS)
IGT
JCT630
600V
30A
15mA
JCT830
800V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range
Repetitive peak off-state voltage(Tj=25)
Repetitive peak reverse voltage(Tj=25)
Tj
VDRM
VRRM
Non repetitive surge peak Off-state voltage
VDSM
Non repetitive peak reverse voltage
RMS on-state
current
TO-220A(Ins) (TC=97)
TO-220B(Non-Ins)
(TC=103)
TO-220F(Ins) (TC=95)
VRSM
IT(RMS)
TEL+86-513-83639777
- 1 / 5-
Value
-40-150
-40-125
600/800
600/800
VDRM +100
VRRM +100
Unit
V
V
V
V
30 A
http://www.jjwdz.com



JCT630
JCT630/830 Series
JieJie Microelectronics CO. , Ltd
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
ITSM
I2t
dI/dt
IGM
330 A
550 A2s
50 As
4A
Average gate power dissipation
PG(AV)
1
W
Peak gate power
PGM 5 W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT
VGT
VGD
IL
IH
dV/dt
VD=12V RL=33Ω
VD=VDRM Tj=125RL=3.3KΩ
IG=1.2IGT
IT=500mA
VD=2/3VDRM Gate Open Tj=125
-
-
0.2
-
-
500
- 15
- 1.5
--
- 50
- 30
--
Unit
mA
V
V
mA
mA
Vs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=55A tp=380μs
Tj=25
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25
Tj=125
Value(MAX)
1.55
10
1
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
TO-220A(Ins)
Rth(j-c) junction to case(AC)
TO-220B(Non-Ins)
TO-220F(Ins)
Value
2.1
1.7
3.4
Unit
/W
TEL+86-513-83639777
- 2 / 5-
http://www.jjwdz.com







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