2SC4183. C4183 Datasheet

C4183 2SC4183. Datasheet pdf. Equivalent


Part C4183
Description 2SC4183
Feature DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSIST.
Manufacture NEC
Datasheet
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DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF C4183 Datasheet
Recommendation Recommendation Datasheet C4183 Datasheet




C4183
DATA SHEET
SILICON TRANSISTOR
2SC4183
RF AMPLIFIER FOR UHF TV TUNER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4183 is specifically designed for UHF RF amplifier applica-
tions. The 2SC4183 features high gain, low noise, and excellent forward
AGC characteristics in tiny plastic super mini mold package makes it
suitable for use in small type equipments such as Hybrid Integrated
Circuit and other applications.
FEATURES
• Low NF and high Gpb
NF = 3.0 dB Typ.
Gpb = 10 dB Typ. (f = 900 MHz)
• Foward AGC characteristics.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCB0
VCE0
VEB0
IC
PT
Tj
Tstg
30
25
3.0
20
160
150
–65 to +150
V
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
13
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Characteristics
Collector Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Noise Figure
Power Gain
Collector Saturation Voltage
Symbol
ICB0
hFE
fT
Cob
NF
Gpb
VCE(sat)
MIN.
60
700
6
TYP.
100
1 000
0.55
3.0
10
MAX.
0.1
240
1.0
4.8
0.5
Unit
µA
MHz
pF
dB
dB
V
Test Conditions
VCB = 10 V, IE = 0
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
VCB = 5 V, IE = 0
VCE = 5 V, IC = 2 mA, f = 900 MHz
VCE = 5 V, IC = 2 mA, f = 900 MHz
IC = 10 mA, IB = 1 mA
hFE Classification
Rank
Marking
hFE
U16
U16
60 to 120
U17
U17
90 to 180
U18
U18
120 to 240
Document No. P11188EJ4V0DS00 (4th edition)
(Previous No. TC-1432A)
Date Published February 1996 P
Printed in Japan
©
1984



C4183
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
Free Air
150
100
50
0
50 100 150
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
18 PT = 150 mW
16 160 µA
14 140 µA
12 120 µA
10 100 µA
8 80 µA
6 60 µA
4 40 µA
2
IC = –20 µA
0
5 10
15 20 25
VCE - Collector to Emitter Voltage - V
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
VCB - Collector to Base Voltage - V
2
2SC4183
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10.0
5.0
2.0
1.0
0.5
0.2
0.1
0.5 0.6 0.7 0.8 0.9 1.0
VBE - Base to Emitter Voltage - V
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
VCE = 10 V
f = 100 MHz
2000
1000
500
200
100
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
IE - Emitter Current - mA
DC CURRENTGAIN vs
COLLECTOR CURRENT
VCE = 10 V
200
100
50
20
10
0.1 0.2
0.5 1.0 2.0 5.0 10.020.0
IC - Collector Current - mA







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