Power Rectifier. CS30L60CT-A Datasheet

CS30L60CT-A Rectifier. Datasheet pdf. Equivalent


Part CS30L60CT-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CS30L60CT-A Super Low Barrier High Voltage Power Rectifier .
Manufacture CITC
Datasheet
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CS30L60CT-A
Chip Integration Technology Corporation
CS30L60CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x15A
60V
150OC
0.53V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
EH
I
D
K
L
M
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.398(10.1) 0.406(10.3)
0.236(6.0) 0.252(6.4)
0.579(14.7) 0.594(15.1)
0.543(13.8) 0.551(14.0)
0.143(3.63) 0.159(4.03)
0.104(2.64) 0.112(2.84)
0.335(8.5) 0.350(8.9)
0.046(1.17) 0.054(1.37)
0.028(0.71) 0.036(0.91)
0.098(2.49) 0.102(2.59)
0.176(4.47) 0.184(4.67)
0.046(1.17) 0.054(1.37)
0.102(2.6) 0.110(2.8)
0.019(0.28) 0.021(0.48)
0.147(3.74) 0.155(3.94)
ØP A
F
B
C
Marking code
G
123
EH
I
D
K
L
M
JN
Alternate
symbol Dimensions in inches(millimeters)
Min Max
A 0.394(10.0) 0.413(10.5)
B 0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E 0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I 0.029(0.75) 0.037(0.95)
J 0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L 0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Non-repetitive avalanche energy
(per diode)
Repetitive peak avalanche energy
(per diode)
Thermal resistance(1)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
VRRM
VRWM
VRM
IO
IFSM
IRRM
TJ = 25OC, IAS = 20A, L = 8.5mH, tp = 1ms
EAS
1us, 25OC
Junction to case
PARM
RθJC
TJ, TSTG
CS30L60CT-A
CS30L60CT
60
30
280
3
400
8600
4
-55 ~ +150
UNIT
V
A
A
A
mJ
W
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
IF = 15A, TJ = 25OC
IF = 15A, TJ = 125OC
Reverse current (per diode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
1
Symbol MIN.
VF
IR
TYP.
530
MAX.
600
550
0.5
60
UNIT
mV
mA
Document ID : DS-11K9Y
Revised Date : 2015/08/10
Revision : C7



CS30L60CT-A
Chip Integration Technology Corporation
CS30L60CT-A
Super Low Barrier High Voltage Power Rectifier
Rating and characteristic curves
Fig. 1 - Forward Power Dissipation (per diode)
16
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
12
8
4
0
0
5
10 15
20 25
Average Forward Current,IF(AV) (A)
Fig. 3 - Reverse Characteristics (per diode)
1000
100
10
1
T A=150O C
TA=125OC
TA=100OC
TA=75OC
0.1
0.01
0
TA=25OC
10 20 30 40 50 60
Reverse Voltage,VR (V)
Fig. 5 - Total Capacitance VS.
Reverse Voltage (per diode)
10000
1000
10
TA=150°C
1
TA=125°C
TA=100°C
0.1 TA=75°C
TA=25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage,VF (Volts)
Fig.4 - Forward Current Derating Curve (per diode)
18
15
12
9
6
3
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 6 - Maximum Avalanche Power Curve
100000
10000
1000
100
10
100
0.1
1 10
Reverse Voltage,VR (V)
100
2
1
0.01
0.1 1
10 100
Pulse Duration,TP (us)
1000
Document ID : DS-11K9Y
Revised Date : 2015/08/10
Revision : C7







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