Power Rectifier. CSF20S60CT-A Datasheet

CSF20S60CT-A Rectifier. Datasheet pdf. Equivalent


Part CSF20S60CT-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CSF20S60CT-A Super Low Barrier High Voltage Power Rectifier.
Manufacture CITC
Datasheet
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CSF20S60CT-A
Chip Integration Technology Corporation
CSF20S60CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x10A
60V
150OC
0.46V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSF20S60CTG-A.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
ITO-220AB
ØP
B
A
K
L
F
C
Marking code
123
E
D
G
H
I
M
JN
ØP A
B
K
L
F
C
Marking code
123
E
D
G
H
I
M
PIN 1
PIN 3
JN
PIN 2
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.390(9.9) 0.408(10.36)
0.268(6.8) 0.283(7.2)
0.583(14.8) 0.598(15.2)
0.512(13.0) 0.543(13.8)
0.102(2.6) 0.150(3.8)
0.101(2.55) 0.112(2.85)
0.043(1.1) 0.053(1.35)
0.043(1.1) 0.053(1.35)
0.020(0.5) 0.028(0.7)
0.098(2.49) 0.102(2.59)
0.169(4.3) 0.185(4.7)
0.112(2.85) 0.128(3.25)
0.098(2.5) 0.114(2.9)
0.020(0.5) 0.028(0.7)
0.130(3.3) 0.134(3.5)
Alternate
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.383(9.72) 0.404(10.27)
0.248(6.3) 0.272(6.9)
0.571(14.5) 0.610(15.5)
0.516(13.1) 0.547(13.9)
- 0.161(4.1)
0.094(2.4) 0.126(3.2)
0.039(1.0) 0.051(1.3)
0.039(1.0) 0.051(1.3)
0.020(0.5) 0.035(0.9)
0.095(2.41) 0.105(2.67)
0.169(4.3) 0.189(4.8)
0.055(1.4) 0.122(3.1)
0.091(2.3) 0.117(2.96)
0.014(0.35) 0.031(0.8)
0.122(3.1) 0.142(3.6)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance(1)
Operating and Storage temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
Symbol
VRRM
VRWM
VRM
IO
IFSM
IRRM
RθJC
TJ, TSTG
CSF20S60CT-A
CSF20S60CT
60
20
280
3
15
-55 ~ +150
UNIT
V
A
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
IF = 20A, TJ = 25OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
460
MAX.
510
470
710
0.5
100
UNIT
mV
mA
Document ID : DS-11KA9
1 Revised Date : 2015/08/10
Revision : C8



CSF20S60CT-A
Chip Integration Technology Corporation
CSF20S60CT-A
Super Low Barrier High Voltage Power Rectifier
Rating and characteristic curves
Fig. 1 - Instantaneous Forward
Characteristics (per diode)
100
10
TA=150°C
1
TA=125°C
TA=100°C
0.1 TA=75°C
TA=25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage,VF (Volts)
Fig.1 - Forward Current Derating Curve (per diode)
15.0
10.0
5.0
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 3 - Reverse Characteristics (per diode)
1000
100
10
1
0.1
0.01
0
T A=150O C
TA=125OC
TA=100OC
TA=75OC
TA=25OC
10 20 30 40 50 60
Reverse Voltage,VR (V)
Document ID : DS-11KA9
2 Revised Date : 2015/08/10
Revision : C8







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