Schottky Rectifier. CSF10S45CT-A Datasheet

CSF10S45CT-A Rectifier. Datasheet pdf. Equivalent


Part CSF10S45CT-A
Description MOS Schottky Rectifier
Feature Chip Integration Technology Corporation CSF10S45CT-A 10A MOS Schottky Rectifier Main Product Chara.
Manufacture CITC
Datasheet
Download CSF10S45CT-A Datasheet


Chip Integration Technology Corporation CSF10S45CT-A 10A MO CSF10S45CT-A Datasheet
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CSF10S45CT-A
Chip Integration Technology Corporation
CSF10S45CT-A
10A MOS Schottky Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x5A
45V
150OC
0.35V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSF10S45CTG-A.
Lead free in compliance with EU RoHS.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
ITO-220AB
ØP
B
A
K
L
F
C
Marking code
123
E
D
G
H
I
M
JN
ØP A
B
K
L
F
C
Marking code
123
E
D
G
H
I
M
PIN 1
PIN 3
JN
PIN 2
Rating at 25OC ambient temperature unless otherwise specified.
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.390(9.9) 0.408(10.36)
0.268(6.8) 0.283(7.2)
0.583(14.8) 0.598(15.2)
0.512(13.0) 0.543(13.8)
0.102(2.6) 0.150(3.8)
0.101(2.55) 0.112(2.85)
0.043(1.1) 0.053(1.35)
0.043(1.1) 0.053(1.35)
0.020(0.5) 0.028(0.7)
0.098(2.49) 0.102(2.59)
0.169(4.3) 0.185(4.7)
0.112(2.85) 0.128(3.25)
0.098(2.5) 0.114(2.9)
0.020(0.5) 0.028(0.7)
0.130(3.3) 0.134(3.5)
Alternate
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.383(9.72) 0.404(10.27)
0.248(6.3) 0.272(6.9)
0.571(14.5) 0.610(15.5)
0.516(13.1) 0.547(13.9)
- 0.161(4.1)
0.094(2.4) 0.126(3.2)
0.039(1.0) 0.051(1.3)
0.039(1.0) 0.051(1.3)
0.020(0.5) 0.035(0.9)
0.095(2.41) 0.105(2.67)
0.169(4.3) 0.189(4.8)
0.055(1.4) 0.122(3.1)
0.091(2.3) 0.117(2.96)
0.014(0.35) 0.031(0.8)
0.122(3.1) 0.142(3.6)
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Typical Thermal resistance (per diode)
Storage temperature
Operating Junction temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
Junction to ambient
Symbol
VRWM
IO
IFSM
IRRM
RθJC
RθJA
TSTG
TJ
CSF10S45CT-A
45
10
250
2
8
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
OC/W
OC/W
OC
OC
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
IF = 3A, TJ = 25OC
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
IR = 0.5mA TJ = 25OC
Symbol MIN.
VF
IR
VBR 45
TYP.
370
350
MAX.
435
0.5
100
UNIT
mV
mA
V
Document ID : DS-11KA8
1
Revised Date : 2016/12/19
Revision : C9



CSF10S45CT-A
Chip Integration Technology Corporation
CSF10S45CT-A
10A MOS Schottky Rectifier
Rating and characteristic curves
Fig. 1 - Forward Characteristics
100
TA = 150oC
10
TA = 125oC
1 TA = 100oC
0.1
TA = 75oC
TA = 50oC
TA = 25oC
Fig. 2 - Reverse Characteristics
100
TA = 125oC
TA = 100oC
10
TA = 75oC
1
TA = 50oC
0.1 TA = 25oC
0.01
0
Per diode
100 200 300 400 500
Instantaneous Forward Voltage, VF (mV)
600
0.01
0
Per diode
10 20 30 40 50 60
Reverse Voltage, VR (V)
Fig. 3 - Forward Power Dissipation
9
8
7
6
5
4
3
2
1
0
0
Per diode
5 10 15
Average Forward Current, IF (A)
20
Fig. 4 - Forward Current Derating Curve
10
9
8
7
6
5
4
3
2
1
0
0
Per diode
25 50 75 100
Case Temperature, TC (oC)
125
150
10000
Fig. 5 - Junction Capacitance
1000
100
10
1
0
Per diode
5 10 15 20
Reverse Voltage, VR (V)
25
2
Document ID : DS-11KA8
Revised Date : 2016/12/19
Revision : C9







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