Schottky Rectifier. CS20L150CT-A Datasheet

CS20L150CT-A Rectifier. Datasheet pdf. Equivalent


Part CS20L150CT-A
Description MOS Schottky Rectifier
Feature Chip Integration Technology Corporation CS20L150CT-A 20A MOS Schottky Rectifier Main Product Chara.
Manufacture CITC
Datasheet
Download CS20L150CT-A Datasheet


Chip Integration Technology Corporation CS20L150CT-A 20A MO CS20L150CT-A Datasheet
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CS20L150CT-A
Chip Integration Technology Corporation
CS20L150CT-A
20A MOS Schottky Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x10A
150V
150OC
0.64V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Lead free in compliance with EU RoHS.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
EH
I
D
K
L
M
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.398(10.1) 0.406(10.3)
0.236(6.0) 0.252(6.4)
0.579(14.7) 0.594(15.1)
0.543(13.8) 0.551(14.0)
0.143(3.63) 0.159(4.03)
0.104(2.64) 0.112(2.84)
0.335(8.5) 0.350(8.9)
0.046(1.17) 0.054(1.37)
0.028(0.71) 0.036(0.91)
0.098(2.49) 0.102(2.59)
0.176(4.47) 0.184(4.67)
0.046(1.17) 0.054(1.37)
0.102(2.6) 0.110(2.8)
0.019(0.28) 0.021(0.48)
0.147(3.74) 0.155(3.94)
ØP A
F
B
C
Marking code
G
123
EH
I
D
K
L
M
JN
Alternate
symbol Dimensions in inches(millimeters)
Min Max
A 0.394(10.0) 0.413(10.5)
B 0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E 0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I 0.029(0.75) 0.037(0.95)
J 0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L 0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Typical Thermal resistance (per diode)
Storage temperature
Operating Junction temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
Junction to ambient
Symbol
VRWM
IO
IFSM
IRRM
RθJC
RθJA
TSTG
TJ
CS20L150CT-A
150
20
250
1
2
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
OC/W
OC/W
OC
OC
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
IF = 3A, TJ = 25OC
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
VR = 150V, TJ = 25OC
VR = 150V, TJ = 125OC
IR = 0.5mA, TJ = 25OC
Symbol MIN.
VF
IR
VBR 150
TYP.
600
770
640
0.02
5
MAX.
800
0.08
20
UNIT
mV
mA
V
Document ID : DS-11KBP
1
Revised Date : 2017/01/05
Revision : C7



CS20L150CT-A
Chip Integration Technology Corporation
CS20L150CT-A
20A MOS Schottky Rectifier
Rating and characteristic curves
Fig. 1 - Forward Characteristics
100
TA = 150oC
10
TA = 125oC
1 TA = 100oC
0.1
TA = 75oC
TA = 50oC
TA = 25oC
Fig. 2 - Reverse Characteristics
10
TA = 125oC
TA = 100oC
1
TA = 75oC
0.1
TA = 50oC
0.01
TA = 25oC
0.01
0
Per diode
200 400 600 800
Instantaneous Forward Voltage, VF (mV)
1000
0.001
0
Per diode
50 100 150
Reverse Voltage, VR (V)
200
Fig. 3 - Forward Power Dissipation
12
10
8
6
4
2
0
0
Per diode
5 10 15
Average Forward Current, IF (A)
20
Fig. 4 - Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
Per diode
25 50 75 100
Case Temperature, TC (oC)
125
150
10000
Fig. 5 - Junction Capacitance
1000
100
10
1
0
Per diode
5 10 15 20
Reverse Voltage, VR (V)
25
2
Document ID : DS-11KBP
Revised Date : 2017/01/05
Revision : C7







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