Power Rectifier. CSF20L80CT Datasheet

CSF20L80CT Rectifier. Datasheet pdf. Equivalent


Part CSF20L80CT
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CSF20L80CT Super Low Barrier High Voltage Power Rectifier .
Manufacture CITC
Datasheet
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CSF20L80CT
Chip Integration Technology Corporation
CSF20L80CT
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x10A
80V
150OC
0.47V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSF20L80CTG.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
ITO-220AB
ØP
B
A
K
L
F
C
Marking code
123
E
D
G
H
I
M
JN
ØP A
B
K
L
F
C
Marking code
123
E
D
G
H
I
M
PIN 1
PIN 3
JN
PIN 2
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.390(9.9) 0.408(10.36)
0.268(6.8) 0.283(7.2)
0.583(14.8) 0.598(15.2)
0.512(13.0) 0.543(13.8)
0.102(2.6) 0.150(3.8)
0.101(2.55) 0.112(2.85)
0.043(1.1) 0.053(1.35)
0.043(1.1) 0.053(1.35)
0.020(0.5) 0.028(0.7)
0.098(2.49) 0.102(2.59)
0.169(4.3) 0.185(4.7)
0.112(2.85) 0.128(3.25)
0.098(2.5) 0.114(2.9)
0.020(0.5) 0.028(0.7)
0.130(3.3) 0.134(3.5)
Alternate
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.383(9.72) 0.404(10.27)
0.248(6.3) 0.272(6.9)
0.571(14.5) 0.610(15.5)
0.516(13.1) 0.547(13.9)
- 0.161(4.1)
0.094(2.4) 0.126(3.2)
0.039(1.0) 0.051(1.3)
0.039(1.0) 0.051(1.3)
0.020(0.5) 0.035(0.9)
0.095(2.41) 0.105(2.67)
0.169(4.3) 0.189(4.8)
0.055(1.4) 0.122(3.1)
0.091(2.3) 0.117(2.96)
0.014(0.35) 0.031(0.8)
0.122(3.1) 0.142(3.6)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current
Forward surge current
Peak repetitive reverse surge current
Repetitive peak avalanche energy
Thermal resistance(1)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
1us, 25OC
Junction to case
VRRM
VRWM
VRM
IO
IFSM
IRRM
PARM
RθJC
TJ, TSTG
CSF20L80CT
CSF20L80CT
80
20
280
3
7000
15
-55 ~ +150
UNIT
V
A
A
A
W
OC/W
OC
Parameter
Conditions
Forward voltage drop
Reverse current
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
IF = 20A, TJ = 25OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
1
Symbol MIN.
VF
IR
TYP.
470
MAX.
650
560
790
0.5
40
UNIT
mV
mA
Document ID : DS-11KFR
Revised Date : 2015/08/06
Revision : C4



CSF20L80CT
Chip Integration Technology Corporation
CSF20L80CT
Super Low Barrier High Voltage Power Rectifier
Rating and characteristic curves
Fig. 1 - Instantaneous Forward
Characteristics
100
TA=150°C
10 TA=125°C
1
TA=100°C
0.1 TA=75°C
0.01
0
TA=25°C
0.2 0.4
0.6 0.8 1.0 1.2
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics
100
TA=150OC
10
TA=125OC
TA=100OC
1
TA=75OC
0.1
0.01
TA=25OC
0 10 20 30 40 50 60 70 80
Reverse Voltage,VR (V)
10000
Fig. 5 - Total Capacitance VS.
Reverse Voltage
f = 1MHz
1000
Fig.2 - Forward Current Derating Curve (per diode)
15.0
10.0
5.0
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 4 - Maximum Avalanche Power Curve
100000
10000
1000
100
10
1
0.01
0.1 1
10 100
Pulse Duration,TP (us)
1000
100
10
0 10 20 30 40 50 60
Reverse Voltage,VR (V)
2
Document ID : DS-11KFR
Revised Date : 2015/08/06
Revision : C4







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