Power Rectifier. CSP8S60S-A Datasheet

CSP8S60S-A Rectifier. Datasheet pdf. Equivalent


Part CSP8S60S-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CSP8S60S-A Super Low Barrier High Voltage Power Rectifier .
Manufacture CITC
Datasheet
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CSP8S60S-A
Chip Integration Technology Corporation
CSP8S60S-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
8A
60V
150OC
0.44V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSP8S60SG-A.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : Molded plastic, TO-277.
Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
Polarity: Indicated by cathode band.
Mounting Position : Any.
Weight : Approximated 0.093 grams.
Outline
TO-277
0.073 (1.85)
0.069 (1.75)
0.264 (6.70)
0.248 (6.30)
1
2
3
PIN 2
PIN 1
PIN 3
0.077 (1.96)
0.069 (1.76)
0.028 (0.71)
0.016 (0.41)
0.216 (5.48)
0.208 (5.28)
0.028 (0.71)
0.016 (0.41)
0.124 (3.15)
0.112 (2.85)
0.014 (0.35)
0.010 (0.25)
0.145 (3.69)
0.133 (3.39)
0.037 (0.95)
0.033 (0.85)
0.037 (0.95)
0.033 (0.85)
0.069 (1.74)
0.057 (1.44)
0.049 (1.25)
0.037 (0.95)
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current
Forward surge current
Thermal resistance
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Junction to case
VRRM
VRWM
VRM
IO
IFSM
RθJC
TJ, TSTG
CSP8S60S-A
CSP8S60S
60
8
280
4
-55 ~ +150
UNIT
V
A
A
OC/W
OC
Parameter
Conditions
Symbol
IF = 1.0A, TJ = 25OC
Forward voltage drop
IF = 8A, TJ = 25OC
IF = 8A, TJ = 125OC
Reverse current
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Theoretical RθJS calculated from the top center of the die straight down to the PCB cathode tab solder junction.
2.Polymide PCB, 2oz.Copper.
VF
IR
MIN.
TYP.
440
MAX.
350
530
500
0.6
100
UNIT
mV
mA
Document ID : DS-12KCG
1 Revised Date : 2015/08/11
Revision : C3



CSP8S60S-A
Chip Integration Technology Corporation
CSP8S60S-A
Super Low Barrier High Voltage Power Rectifier
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
12
10
8
6
4
2
0
25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 3 - Reverse Characteristics
1000
100
10
1
TA=150OC
TA=125OC
TA=100O C
TA=85OC
0.1
0.01
0
10000
TA=50OC
10 20 30 40
Reverse Voltage,VR (V)
TA=25OC
50 60
Fig. 5 - Total Capacitance VS.
Reverse Voltage
1000
f = 1MHz
Fig. 2 - Instantaneous Forward
Characteristics
100
10 TA=150°C
TA=125°C
1
0.1
TA=100°C
TA=85°C
TA=50°C
TA=25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage,VF (Volts)
Fig. 4 - Maximum Avalanche Power Curve
10000
1000
100
10
10
100 1000
Pulse Duration,TP (us)
10000
100
0.1
1 10
Reverse Voltage,VR (V)
100
2
Document ID : DS-12KCG
Revised Date : 2015/08/11
Revision : C3







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