Power Rectifier. CSP10S50S-A Datasheet

CSP10S50S-A Rectifier. Datasheet pdf. Equivalent


Part CSP10S50S-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CSP10S50S-A Super Low Barrier High Voltage Power Rectifier .
Manufacture CITC
Datasheet
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CSP10S50S-A
Chip Integration Technology Corporation
CSP10S50S-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
10A
50V
150OC
0.35V
Outline
TO-277
0.264 (6.70)
0.248 (6.30)
PIN 2
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSP10S50SG-A.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : Molded plastic, TO-277.
Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
Polarity: Indicated by cathode band.
Mounting Position : Any.
Weight : Approximated 0.093 grams.
Maximum ratings and electrical characteristics
0.073 (1.85)
0.069 (1.75)
2
1
0.077 (1.96)
0.069 (1.76)
3
0.028 (0.71)
0.016 (0.41)
0.216 (5.48)
0.208 (5.28)
0.028 (0.71)
0.016 (0.41)
0.124 (3.15)
0.112 (2.85)
0.014 (0.35)
0.010 (0.25)
0.145 (3.69)
0.133 (3.39)
0.037 (0.95)
0.033 (0.85)
0.037 (0.95)
0.033 (0.85)
0.069 (1.74)
0.057 (1.44)
0.049 (1.25)
0.037 (0.95)
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current
Forward surge current
Thermal resistance
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Junction to case
VRRM
VRWM
VRM
IO
IFSM
RθJC
TJ, TSTG
CSP10S50S-A
CSP10S50S
50
10
280
4
-55 ~ +150
PIN 1
PIN 3
UNIT
V
A
A
OC/W
OC
Parameter
Conditions
Symbol
Reverse breakdown voltage
IR = 0.5mA
V(BR)R
Forward voltage drop
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
VF
VR = VRRM TJ = 25OC
Reverse current
VR = VRRM TJ = 100OC
IR
VR = VRRM TJ = 150OC
Note : 1.FR-4 PCB, 2oz.Copper.
2.Polymide PCB, 2oz.Copper.Cathode pad dimensions 18.8mm x 14.4mm.Anode pad dimensions 5.6mm x 14.4mm.
MIN.
50
TYP.
350
MAX.
470
410
0.3
15
75
UNIT
V
mV
mA
Document ID : DS-12KCR
1 Revised Date : 2015/08/11
Revision : C3



CSP10S50S-A
Chip Integration Technology Corporation
CSP10S50S-A
Super Low Barrier High Voltage Power Rectifier
Rating and characteristic curves
Fig. 1 - Forward Power Dissipation
5
4
3
2
1
0
0 5 10 15
Average Forward Current,IF(AV) (A)
Fig. 3 - Reverse Characteristics
100
10
TA=100OC
1
TA=75OC
0.1 TA=50OC
0.01 0
TA=25OC
10 20 30 40
Reverse Voltage,VR (V)
1000000
Fig. 5 - Total Capacitance VS.
Reverse Voltage
50
10000
1000
f = 1MHz
100
10
1 0.1
1 10
Reverse Voltage,VR (V)
100
Fig. 2 - Instantaneous Forward
Characteristics
100
10
TA=150°C
TA=125°C
1
TA=100°C
TA=75°C
TA=25°C
0.1
0.01
0
0.1 0.2 0.3 0.4
0.5 0.6
Instantaneous Forward Voltage,VF (Volts)
Fig.4 - Forward Current Derating Curve
12
10
8
6
4
2
0
25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 6 - Maximum Avalanche Power Curve
1000000
10000
1000
1
2
10 100 1000
Pulse Duration,TP (us)
10000
Document ID : DS-12KCR
Revised Date : 2015/08/11
Revision : C3





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