PNP TRANSISTORS. BC212 Datasheet


BC212 TRANSISTORS. Datasheet pdf. Equivalent


Part Number

BC212

Description

SILICON PNP TRANSISTORS

Manufacture

Central Semiconductor

Total Page 3 Pages
Datasheet
Download BC212 Datasheet


BC212
BC212
BC212A
BC212B
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC212 series are
silicon PNP transistors designed for low noise, high
gain amplifier applications.
TO-92 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
60
50
5.0
200
300
-65 to +150
416
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=30V
IEBO
VEB=4.0V
BVCBO
IC=10μA
60
BVCEO
IC=2.0mA
50
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=500μA
VCE(SAT) IC=100mA, IB=5.0mA
VBE(SAT) IC=100mA, IB=5.0mA
VBE(ON)
VCE=5.0V, IC=2.0mA
0.60
hFE VCE=5.0V, IC=2.0mA (BC212) 60
hFE
VCE=5.0V, IC=2.0mA (BC212A)
100
hFE
VCE=5.0V, IC=2.0mA (BC212B)
200
fT
VCE=5.0V, IC=10mA, f=100MHz
200
Cob VCB=10V, IC=0, f=1.0MHz
NF VCE=5.0V, IC=200μA,
f=1.0kHz, RS=2.0kΩ
MAX
15
15
0.25
0.60
1.4
0.72
400
300
400
6.0
10
UNITS
V
V
V
mA
mW
°C
°C\W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
dB
R1 (19-May 2017)

BC212
BC212
BC212A
BC212B
SILICON
PNP TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Collector
2) Base
3) Emitter
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (19-May 2017)


Features BC212 BC212A BC212B SILICON PNP TRANSIST ORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCT OR BC212 series are silicon PNP transis tors designed for low noise, high gain amplifier applications. TO-92 CASE MA RKING: FULL PART NUMBER MAXIMUM RATING S: (TA=25°C) Collector-Base Voltage Co llector-Emitter Voltage Emitter-Base Vo ltage Continuous Collector Current Powe r Dissipation Operating and Storage Jun ction Temperature Thermal Resistance S YMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJ A 60 50 5.0 200 300 -65 to +150 416 E LECTRICAL CHARACTERISTICS: (TA=25°C un less otherwise noted) SYMBOL TEST COND ITIONS MIN ICBO VCB=30V IEBO VEB=4 .0V BVCBO IC=10μA 60 BVCEO IC=2.0 mA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=500μA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.60 hFE VCE=5.0V, IC=2.0mA (BC212) 60 hFE VCE =5.0V, IC=2.0mA (BC212A) 100 hFE VCE =5.0V, IC=2.0mA (BC212B) 200 fT VCE=5.0V, IC=10mA, f=100MHz .
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