BARRIER RECTIFIER. SB2050CT Datasheet

SB2050CT RECTIFIER. Datasheet pdf. Equivalent


Part SB2050CT
Description 20A DUAL SCHOTTKY BARRIER RECTIFIER
Feature ® WON-TOP ELECTRONICS SB2020CT – SB20100CT 20A DUAL SCHOTTKY BARRIER RECTIFIER Pb Features  Schot.
Manufacture WON-TOP
Datasheet
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SB2050CT
®
WON-TOP ELECTRONICS
SB2020CT – SB20100CT
20A DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
C
G
D
B
PIN1 2
3
A
Mechanical Data
Case: TO-220, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.9 grams (approx.)
Mounting Position: Any
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
P
I
H
E
L
J
K
TO-220
Dim Min Max
A 13.90 15.90
B 9.80 10.70
C 2.54 3.43
D 3.56 4.56
E 12.70 14.73
F 0.51 0.96
G 3.55 Ø 4.09 Ø
H 5.75 6.85
I 4.16 5.00
J 2.03 2.92
K 0.30 0.65
L 1.14 1.40
P 2.29 2.79
All Dimensions in mm
PIN 1
PIN 3
PIN 2
Case
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current Total Device
@TC = 100°C
Per Diode
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward Voltage
per diode
@IF = 10A, TJ = 25°C
@IF = 10A, TJ = 125°C
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
Typical Junction Capacitance (Note 1)
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
CJ
R JA
R JC
TJ, TSTG
SB SB SB SB SB SB SB SB Unit
2020CT 2030CT 2040CT 2045CT 2050CT 2060CT 2080CT 20100CT
20 30 40 45 50 60 80 100 V
14 21 28 32 35 42 56 70
20
10
V
A
150 A
0.55
0.50
0.75
0.65
0.85
0.75
V
0.5
20
mA
650 350 pF
60
2.0
°C/W
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1



SB2050CT
SB2020CT – SB20100CT
25
20
15
10
5
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
Single Half-Sine-Wave
JEDEC Method
120
90
60
30
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
10
9
DC, TJ = 150°C
Per Diode
8
7
2080CT – 20100CT
6
2050CT – 2060CT
5
4
3
2020CT – 2045CT
2
1
0
0 2 4 6 8 10 12
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
www.wontop.com
2
®
100
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
2050CT – 2060CT
10
2020CT – 2045CT
1.0
WON-TOP ELECTRONICS
2080CT – 20100CT
0.1
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
10 TJ = 125°C
1.0
0.1
0.01
TJ = 75°C
TJ = 25°C
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
1500
1200
f = 1MHz
900
600
2050CT – 20100CT
300
2020CT – 2045CT
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012







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