Power MOSFET. CN2302 Datasheet

CN2302 MOSFET. Datasheet pdf. Equivalent

CN2302 Datasheet
Recommendation CN2302 Datasheet
Part CN2302
Description N-Channel Enhancement Mode Power MOSFET
Feature CN2302; CONSONANCE N-Channel Enhancement Mode Power MOSFET CN2302 General Description: The CN2302 uses ad.
Manufacture CONSONANCE
Datasheet
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CONSONANCE CN2302
CONSONANCE
N-Channel Enhancement Mode Power MOSFET
CN2302
General Description:
The CN2302 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection or in
other Switching application.
Pin Assignment
Applications:
Battery protection
Load switch
Power management
Schematic diagram
Features:
VDS = 20V,ID = 2.9A
RDS(ON) < 59m@ VGS=2.5V
RDS(ON) < 45m@ VGS=4.5V
High power and current handing capability
Available in 3 pin SOT23 Package
Pb-free, rohs compliant and halogen free
Top view
Ordering Information
Part Number
CN2302
Device Marking
2302
Package
SOT-23
Operating Ambient Temperature
40to 85
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REV 1.0



CONSONANCE CN2302
CONSONANCE
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
20
±12
2.9
10
1
-55 to 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA 125 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Condition
Min
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±10V,VDS=0V
20
-
-
VDS=VGS,ID=250μA
VGS=2.5V, ID=2.5A
VGS=4.5V, ID=2.9A
VDS=5V,ID=2.9A
0.5
-
-
-
CIss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
-
-
-
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=10V,ID=2.9A
VGS=4.5V,RGEN=6
VDS=10V,ID=2.9A,
VGS=4.5V
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS=2.9A
-
-
Typ
22
-
-
0.85
37
30
8
300
120
80
10
50
17
10
4.0
0.65
1.2
0.75
-
Max
-
1
±100
1.2
59
45
-
-
-
-
15
85
45
20
10
-
-
1.2
2.9
Unit
V
uA
nA
V
m
m
A/V
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
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REV 1.0



CONSONANCE CN2302
CONSONANCE
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. RθJA is measured with the device mounted on 1 in2 FR4 board with 2oz. copper, in a still air environment
with TA=25℃,t 10 sec. The value in any given application depends on the user’s specific board design.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Typical Electrical and Thermal Characteristics
Figure 1 Switching Test Circuit
Figure 2 Switching Waveforms
Figure 3 Power Dissipation
Figure 4 Drain Current
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REV 1.0







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