BRIDGE RECTIFIER. D3SBA100 Datasheet

D3SBA100 RECTIFIER. Datasheet pdf. Equivalent

D3SBA100 Datasheet
Recommendation D3SBA100 Datasheet
Part D3SBA100
Description SILICON BRIDGE RECTIFIER
Feature D3SBA100; www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 D3SBA10 ~ D3SBA100 PRV : 100 ~ 10.
Manufacture EIC
Datasheet
Download D3SBA100 Datasheet




EIC D3SBA100
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
D3SBA10 ~ D3SBA100
PRV : 100 ~ 1000 Volts
Io : 4.0 Amperes
SILICON BRIDGE RECTIFIER
RBV4
0.150 (3.8)
C3
0.996 (25.3)
0.134 (3.4)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
+~ ~
0.303 (7.7)
0.287 (7.3)
0.043 (1.1)
0.035 (0.9)
0.032 (0.8)
0.043 (1.1)
0.075 (1.9)
0.060 (1.5)
0.114 (2.9)
0.098 (2.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Reverse Voltage
Maximum Average Forward Current
(50Hz Sine wave, R-load)
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Current Squared Time at 1ms t < 10 ms, Tc=25°C
Maximum Forward Voltage per Diode at IF = 2.0 A.
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case
Maximum Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL D3SBA10 D3SBA20 D3SBA40 D3SBA60 D3SBA80 D3SBA100 UNIT
VRM 100 200 400 600 800 1000 V
IF(AV)
4 (With heatsink , Tc = 108°C)
2.3 (Without heatsink , Ta = 25°C)
A
IFSM 80 A
I2t 32 A2S
VF 1.05 V
IR 10 μA
RӨJC
RӨJA
TJ
TSTG
5.5 (With heatsink)
30 (Without heatsink)
150
- 40 to + 150
°C/W
°C/W
°C
°C
Page 1 of 2
Rev. 03 : June 2, 2009



EIC D3SBA100
www.eicsemi.com
TH97/2478
TH09/2479
RATING AND CHARACTERISTIC CURVES ( D3SBA10 ~ D3SBA100 )
IATF 0113686
SGS TH07/1033
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
6
5 Sine wave, R-load on heatsink
4
3
2
1
0 80
90 100 110 120 130 140 150
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
120
Non-repetitive
100 TJ = 25°C
80
60
40
20
0
12
4 6 10 20 40 60 10
NUMBER OF CYCLES
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
1.0
TL = 25 °C
0.1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE, VOLTS
FIG.4 - POWER DISSIPATION
14
12 Sine wave
TJ = 150 °C
10
8
6
4
2
0
0 1 2 3 4 567
AVERAGE RECTIFIED
CURRENT, (A)
Page 2 of 2
Rev. 03 : June 2, 2009







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