General Description
The BPM0306CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications.
Features
N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
P-Channel VDS =-30V, ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
High power and current handing capability
Typ...
