General Description
The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications.
Features
N-Channel VDS =40V, ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V
P-Channel VDS =-40V, ID = -7A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4....
