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BLF7G22LS-200

Ampleon
Part Number BLF7G22LS-200
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1....
Datasheet PDF File BLF7G22LS-200 PDF File

BLF7G22LS-200
BLF7G22LS-200

Overview
BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev.
5 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1620 28 55 18.
5 31 31[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 5 MHz.
1.
2 Features and benefits  Excellent ruggedness  High efficiency ...


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