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Mode MOSFET. TDM3605 Datasheet |
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T echcode®
P-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3605 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
‐60V/‐132A
RDS(ON) < 7.2mΩ @ VGS=‐10V
Reliable and Rugged
Lead free product is available
TO220 Package
Application
PWM applications
Load switch
Power management
DATASHEET
TDM3605
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Diode Continuous Forward Current
Is
Pulse Drain Current Tested
IDP(TC=25℃)
Continuous Drain Current
ID (TC=25℃)
ID (TC=100℃)
Maximum Power Dissipation
PD(TC=25℃)
PD(TC=100℃)
Thermal Resistance‐Junction to Ambient
RθJA
Thermal Resistance‐Junction to Case
NOTES:
RθJC
1. Max continuous current is limited by bonding wire.
Rating
‐60
+25
‐80
‐264
‐132 note1
‐83
250
100
50
0.5
Unit
V
V
A
A
A
A
W
W
℃/W
℃/W
March 22, 2016 Techcode Semiconductor Limited www.techcodesemi.com
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T echcode®
P-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
DATASHEET
TDM3605
Parameter
Symbol Test Conditions
STATIC CHARACTERISTICS
Drain‐Source Breakdown Voltage
BVDSS
VGS=0V ID=‐250μA
Zero Gate Voltage Drain Current
IDSS VDS=‐48V,VGS=0V
Gate‐Body Leakage Current
IGSS VGS=±25V,VDS=0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=‐250μA
Drain‐Source On‐State Resistance
RDS(ON)
VGS=‐10V, IDS=‐20A
DYNAMIC CHARACTERISTICS (Note3)
Gate Resistance
Input Capacitance
RG VDS=0V,VGS=0V, F=1.0MHz
Ciss VDS=‐30V,VGS=0V, F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
td(on)
tr
VDD=‐30V, RL=30 Ω, VGEN=‐10V,
RG=6 Ω IDS=‐1A
Turn‐Off Delay Time
td(off)
Turn‐Off Fall Time
tf
Total Gate Charge
Qg VDS=‐30V,IDS=‐20A,VGS=‐10V
Gate‐Source Charge
Qgs
Gate‐Drain Charge
Qgd
Body Diode Reverse Recovery Time
Trr
IDS=‐20A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge Qrr
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD VGS=0V,ISD=‐1A
NOTES:
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
3. Guaranteed by design, not subject to production testing
Min Typ Max Unit
‐60 ‐
‐ ‐
‐ ‐
‐
‐1
±100
V
μA
nA
‐1
‐3
‐ 5.6 7.2
V
mΩ
‐ 3 ‐
‐ 6095 ‐
‐ 1080 ‐
‐ 430 ‐
Ω
PF
PF
PF
‐ 18 33 nS
‐ 20 36 nS
‐ 200 360 nS
‐ 120 216 nS
‐ 136 ‐
nC
‐ 20 ‐
nC
‐ 33 ‐
nC
‐ 51 ‐
nS
‐ 90 ‐
nC
‐ ‐0.7 ‐1 V
March 22, 2016 Techcode Semiconductor Limited www.techcodesemi.com
2
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T echcode®
P-Channel
Enhancement
Mode
MOSFET
Typical Operating Characteristics
DATASHEET
TDM3605
March 22, 2016 Techcode Semiconductor Limited www.techcodesemi.com
3
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