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Mode MOSFET. TDM31534 Datasheet |
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31534 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < 78mΩ @ VGS=4.5V
RDS(ON) < 69mΩ @ VGS=10V
Reliable and Rugged
Lead free product is available
SOP‐8 Package
Application
PWM applications
Load switch
Power management
Hard Switched and High Frequency Circuits
DATASHEET
TDM31534
Top View of SOP‐8
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Drain Current @ Continuous(Note 1)
Drain Current @ Current‐Pulsed (Note 2)
Diode Continuous Forward Current(Note 1)
Maximum Power Dissipation (Note 1)
Maximum Operating Junction Temperature
Storage Temperature Range
Thermal Resistance,Junction‐to‐Ambient (Note 1)
Symbol
VDS
VGS
ID（TA=25℃）
ID（TA=70℃）
IDM（TA=25℃）
IS（TA=25℃）
PD(TA=25℃)
PD(TA=70℃)
TJ
TSTG
RθJA(t≤10s)
RθJA Steady State
Limit
150
+20
4.5
3.6
18
3
3.1
2.0
150
‐55 To 150
40
80
Unit
V
V
A
A
A
A
W
W
℃
℃
℃/W
℃/W
July 22, 2016 Techcode Semiconductor Limited www.techcodesemi.com
1
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
DATASHEET
TDM31534
Parameter
Symbol Condition
Min
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=120V,VGS=0V
VGS=±25V,VDS=0V
150
‐
‐
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250μA
2
Drain‐Source On‐State Resistance
RDS(ON)
VGS=4.5V, ID=3A
VGS=10V, ID=5A
‐
‐
DYNAMIC CHARACTERISTICS (Note3)
Gate Resistance
RG VDS=0V,VGS=0V, F=1.0MHz
Input Capacitance
Ciss VDS=30V,VGS=0V, F=1.0MHz
‐
‐
Output Capacitance
Coss
‐
Reverse Transfer Capacitance
Crss
‐
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
VDS=30V, RL=30Ω, VGEN=10V,RG=6Ω ‐
ID=1A
‐
‐
‐
VDS=75V,ID=4.5A,VGS=10V
‐
Gate‐Source Charge
Qgs
‐
Gate‐Drain Charge
Qgd
‐
Body Diode Reverse Recovery Time
Trr
IF=4.5A, dI/dt=100A/μs
‐
Body Diode Reverse Recovery Charge Qrr
‐
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD VGS=0V,IS=4.5A
NOTES:
1. Surface Mounted on 1in2 pad area, t≤10sec.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
3. Guaranteed by design, not subject to production testing
‐
Typ Max Unit
‐ ‐
V
‐ 1
μA
‐ ±100 nA
3 4
60 78
57 69
V
mΩ
mΩ
1
2000
105
30
‐
2600
‐
‐
Ω
PF
PF
PF
16 29
6 11
42 76
8 15
35 49
6 ‐
4.6 ‐
103 ‐
250 ‐
nS
nS
nS
nS
nC
nC
nC
nS
nC
0.8 1.3 V
July 22, 2016 Techcode Semiconductor Limited www.techcodesemi.com
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
Typical Operating Characteristics
DATASHEET
TDM31534
July 22, 2016 Techcode Semiconductor Limited www.techcodesemi.com
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