256-Byte EEPROM. SLE5542 Datasheet

SLE5542 EEPROM. Datasheet pdf. Equivalent

SLE5542 Datasheet
Recommendation SLE5542 Datasheet
Part SLE5542
Description Intelligent 256-Byte EEPROM
Feature SLE5542; Chip Card & Security ICs SLE 5542 Intelligent 256-Byte EEPROM with Write Protection function and Pro.
Manufacture Infineon
Datasheet
Download SLE5542 Datasheet




Infineon SLE5542
Chip Card & Security ICs
SLE 5542
Intelligent 256-Byte EEPROM
with Write Protection function
and Programmable Security Code
Short Product Information
May 2006



Infineon SLE5542
SLE 5542 Short Product Information
Revision History: Current Version 2006-05-19
Previous Releases: 2005-06-16
Page
Subjects (changes since last revision)
all Editorial changes
Ref.: SPI_SLE5542_0506.doc
Important:
Further information is confidential and on request. Please contact:
Infineon Technologies AG in Munich, Germany,
Chip Card & Security ICs,
Tel +49 (0)89 / 234-80000
Fax +49 (0)89 / 234-81000
E-Mail: security.chipcard.ics@infineon.com
Published by Infineon Technologies AG, AIM CC Applications Group
D-81726 München
© Infineon Technologies AG 2006
All Rights Reserved.
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Infineon SLE5542
Intelligent 256-Byte EEPROM
with Write Protection Function
and Programmable Security Code (PSC)
SLE 5542
Features
100% functional compatibility to SLE 4442
M3
256 x 8 bit EEPROM organization of Data Memory
32 x 1 bit Protection Memory
– Byte-wise write protection of first 32 addresses (byte 0...31) of Data Memory
– Manufacturer Code for unique identification of application
Data Memory (addresses 0…255) alterable only after verification of 3-Byte
Programmable Security Code (PSC)
Two-wire link protocol
– Byte-wise addressing
– End of processing indicated at data output
Contact configuration and Answer-to-Reset (synchronous transmission) in accordance
to standard ISO/IEC 7816
Sophisticated electrical characteristics
– Ambient temperature –40 … +80°C for chip, –25 … +80°C for module
– Supply voltage 5 V ± 10 %
– Supply current < 3 mA (typical 600 µA)
– EEPROM erase / write time 5 ms
– ESD protection typical 4,000 V
– EEPROM Endurance minimum 100,000 erase / write cycles1)
– Data retention for minimum of 10 years1)
Advanced 1.2 µm CMOS-technology optimised for security layout
– EEPROM-cells protected by shield
– Shielding of deeper layers via metal
– Sensory and logical security functions
– No isolation on backside necessary
1) Values are temperature dependent.
Short Product Information
3/6
2006-05-19







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