N-Channel MOSFET. SM4507NHKP Datasheet

SM4507NHKP MOSFET. Datasheet pdf. Equivalent

SM4507NHKP Datasheet
Recommendation SM4507NHKP Datasheet
Part SM4507NHKP
Description N-Channel MOSFET
Feature SM4507NHKP; SM4507NHKP ® N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/60A, R= DS(ON) 5.
Manufacture Sinopower
Datasheet
Download SM4507NHKP Datasheet




Sinopower SM4507NHKP
SM4507NHKP
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/60A,
R=
DS(ON)
5.5m
(Max.)
@
V =10V
GS
RDS(ON)= 8.7m(Max.) @ VGS=4.5V
Reliable and Rugged
Lower Qg and Qgd for high-speed switching
Lower RDS(ON) to Minimize Conduction Losses
Lead Free and Green Devices Available
(RoHS Compliant)
ESD protection
100% UIS + Rg Tested
Applications
DDDD
S S SG
DFN5x6-8
(5,6,7,8)
DD DD
Pin 1
(4) G
Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM4507NH
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM4507NH KP :
4507NH
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2015
1
www.sinopowersemi.com



Sinopower SM4507NHKP
SM4507NHKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VD SS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID Continuous Drain Current
IDM a Pulsed Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
ID b Continuous Drain Current
PD b Maximum Power Dissipation
RθJA b Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t 10s
Steady State
30
±20
150
-55 to 150
12
60
38
120
29.8
11.9
4.2
17.4
13.9
2.5
1.6
20
50
V
°C
A
W
°C/W
A
W
°C/W
IAS c Avalanche Current, Single pulse
L=0.1mH
L=0.3 mH
L=0.5mH
20
14 A
12
L=0.1mH
20
EAS c Avalanche Energy, Single pulse
L=0.3 mH
29.4 mJ
L=0.5mH
36
Note aPulse width is limited by max. junction temperature.
Note bRθJA steady state t=100s.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2015
2
www.sinopowersemi.com



Sinopower SM4507NHKP
SM4507NHKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSSt
Drain-Source Breakdown Voltage
(transient)
Test Conditions
Min.
VGS=0V, IDS=250µA
VGS=0V, ID(aval)=20A
Tcase=25°C, ttransient=100ns
30
34
IDSS Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
RDS(ON) d Drain-Source On-state Resistance
VGS=10V, IDS=15A
TJ=125°C
VGS=4.5V, IDS=10A
Gfs Forward Transconductance
Diode Characteristics
VDS=6V, IDS=5A
VSD d Diode Forward Voltage
ISD=10A, VGS=0V
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
ISD=5A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG
C is s
Coss
Crss
td ( ON)
tr
td (OFF )
tf
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=1
Gate Charge Characteristics
Qg Total Gate Charge
VDS=15V, VGS=10V,
IDS=15A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V,
IDS=15A
Qgd Gate-Drain Charge
Note dPulse test ; pulse width300µs, duty cycle2%.
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.7
-
4.5
6.75
6.7
18
0.8
25
11
14
11.8
1.6
780
510
39
11
8
19.6
17
12.5
5.8
1.4
3
1.5
Max. Unit
-V
-V
1
µA
30
2.5 V
±10 µA
5.5
- m
8.7
-S
1.1 V
-
- ns
-
- nC
2.5
1010
-
-
-
-
-
-
pF
ns
17
-
- nC
-
-
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2015
3
www.sinopowersemi.com







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