N-Channel MOSFET. SM4031NHKP Datasheet

SM4031NHKP MOSFET. Datasheet pdf. Equivalent

SM4031NHKP Datasheet
Recommendation SM4031NHKP Datasheet
Part SM4031NHKP
Description N-Channel MOSFET
Feature SM4031NHKP; SM4031NHKP ® N-Channel Enhancement Mode MOSFET Features · 40V/100A, RDS(ON)= 1.35mW (max.) @ VGS=1.
Manufacture Sinopower
Datasheet
Download SM4031NHKP Datasheet




Sinopower SM4031NHKP
SM4031NHKP
®
N-Channel Enhancement Mode MOSFET
Features
· 40V/100A,
RDS(ON)= 1.35mW (max.) @ VGS=10V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lower RDS(ON) to Minimize Conduction Losses
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
(5,6,7,8)
DD DD
Pin 1
Applications
· SMPS Synchronous Rectification
· Load Switch
· DC-DC Conversion
· Or-ing
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM4031NH
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4031NH KP :
4031NH
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2016
1
www.sinopowersemi.com



Sinopower SM4031NHKP
SM4031NHKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TSTG
IS a
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID a Continuous Drain Current
IDM b Pulsed Drain Current
PD c,d Maximum Power Dissipation
RqJ C c
ID e,f
Thermal Resistance-Junction to Case
Continuous Drain Current
IDM Pulsed Drain Current
PD e,f Maximum Power Dissipation
RqJA e Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t £ 10s
Steady State
40
±20
175
-55 to 175
100
100
100
400
150
75
1
36
30
90
2.72
1.9
17
55
V
°C
A
W
°C/W
A
A
W
°C/W
IAS g Avalanche Current, Single pulse
L=0.5mH
45 A
EAS g Avalanche Energy, Single pulse
L=0.5mH
506 mJ
Note aMaximum continue current is limited by package and equal to 100A.
Note bPulse width is limited by maximum junction temperature 175°C.
Note cRqJC steady state t<0.1s. It is more useful by using large thermal heat sink and minimizes variation of case
temperature w/o cumulative effect of heat. (JESD51-1)
Note dPower dissipation (Tc) is based on RθJc and the maximum junction temperature is equal to 175°C.
Note eRqJA steady state t=999s. RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper,
in the air environment with TA =25°C. The thermal resistance of RθJA = RθJC (junction to case) + RθCA (case
to ambient). RθCA is determined by the user's board design.
Note fPower dissipation and ID are based on RθJA and the maximum junction temperature is equal to 175°C.
Note gUIS tested and pulse width limited by maximum junction temperature 175°C (Initial temperature Tj=25°C).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2016
2
www.sinopowersemi.com



Sinopower SM4031NHKP
SM4031NHKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) h Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD h Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics i
VGS=0V, IDS=250mA
VDS=32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=25A
TJ=125°C
VDS=5V, IDS=30A
ISD=20A, VGS=0V
ISD=20A, dlSD/dt=100A/ms
Vdd=20V
40
-
-
2
-
-
-
-
-
-
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics i
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=20V,
Frequenc y=1.0MHz
VDD=20V, RL=20W,
IDS=1A, VGEN=10V,
RG=6W
0.6
-
-
-
-
-
-
-
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=20V, VGS=10V,
IDS=25A
Qgd Gate-Drain Charge
Note hPulse test ; pulse width£300ms, duty cycle£2%.
Note iGuaranteed by design, not subject to production testing.
-
-
-
-
Typ.
-
-
-
3
-
1.1
1.95
40
0.76
60
29
31
70
0.9
5020
1770
150
30
11.2
66
108
89
14
24
18
Max.
-
1
30
4
±100
1.35
-
-
1.1
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
Unit
V
mA
V
nA
mW
S
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2016
3
www.sinopowersemi.com







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