N-Channel MOSFET. SM3324NHQG Datasheet

SM3324NHQG MOSFET. Datasheet pdf. Equivalent

SM3324NHQG Datasheet
Recommendation SM3324NHQG Datasheet
Part SM3324NHQG
Description N-Channel MOSFET
Feature SM3324NHQG; SM3324NHQG ® N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/77A, RDS(ON)= 3.6.
Manufacture Sinopower
Datasheet
Download SM3324NHQG Datasheet




Sinopower SM3324NHQG
SM3324NHQG
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/77A,
RDS(ON)= 3.6m(Max.) @ VGS=10V
R=
DS(ON)
5.3m
(Max.)
@
V =4.5V
GS
Lower Qg and Qgd for high-speed switching
Lower RDS(ON) to Minimize Conduction Losses
ESD Protection
100% UIS + Rg Tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
DDDD
SS SG
DFN3x3D-8_EP
(5,6,7,8)
DD DD
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM3324NH
SM3324NH QG :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3324N
XXXXX
Package Code
QG : DFN3x3D-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
1
www.sinopowersemi.com



Sinopower SM3324NHQG
SM3324NHQG
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20 V
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
150
-55 to 150
25
°C
ID Continuous Drain Current
IDM a Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
77 A
49
180 A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
32.8
W
13.1
RθJC Thermal Resistance-Junction to Case
ID b Continuous Drain Current
Steady State
TA=25°C
TA=70°C
3.8 °C/W
18.1
A
14.5
PD b Maximum Power Dissipation
TA=25°C
TA=70°C
1.78
W
1.14
RθJA b Thermal Resistance-Junction to Ambient
t 10s
Steady State
40 °C/W
70
IAS c Avalanche Current, Single pulse
L=0.1mH
35 A
EAS c Avalanche Energy, Single pulse
L=0.1mH
61.25
mJ
Note aPulse width is limited by max. junction temperature.
Note bSurface Mounted on 1in2 pad area, t 999sec.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
2
www.sinopowersemi.com



Sinopower SM3324NHQG
SM3324NHQG
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSSt
Drain-Source Breakdown Voltage
(transient)
Test Conditions
Min. Typ. Max. Unit
VGS=0V, IDS=250µA
VGS=0V, ID(aval)=35A
Tcase=25°C, ttransient=100ns
30
34
-
-
-V
-V
IDSS Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=85°C
-
-
-1
µA
- 30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
1.4 1.7 2.5 V
- - ±12 µA
RDS(ON) d Drain-Source On-state Resistance
VGS=10V, IDS=15A
TJ=125°C
-
-
3 3.6
4.35 - m
VGS=4.5V, IDS=10A
- 4.1 5.3
Gfs Forward Transconductance
Diode Characteristics
VDS=5V, IDS=10A
- 20 - S
VSD d Diode Forward Voltage
ISD=10A, VGS=0V
- 0.77 1.1 V
trr Reverse Recovery Time
- 40 -
ta Charge Time
tb Discharge Time
ISD=5A, dlSD/dt=100A/µs, - 20 - ns
Vdd=15V
- 20 -
Qrr Reverse Recovery Charge
- 33 - nC
Dynamic Characteristics
RG
Ciss
Coss
Crss
td(ON )
tr
t d( OFF)
tf
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz -
0.8 1.8
VGS=0V,
VDS=15V,
Frequency=1.0MHz
- 1820 -
- 1100 -
- 90 -
pF
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=1
- 15 -
- 12 -
ns
- 28 -
- 32 -
Gate Charge Characteristics
Qg Total Gate Charge
VDS=15V, VGS=10V,
IDS=15A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V,
IDS=15A
Qgd Gate-Drain Charge
Note dPulse test ; pulse width300µs, duty cycle2%.
- 28 37
- 13.4 -
- 2.5 -
-4-
- 4.5 -
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
3
www.sinopowersemi.com







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