N-Channel MOSFET. SM3325NSQA Datasheet

SM3325NSQA MOSFET. Datasheet pdf. Equivalent

SM3325NSQA Datasheet
Recommendation SM3325NSQA Datasheet
Part SM3325NSQA
Description N-Channel MOSFET
Feature SM3325NSQA; SM3325NSQA Features · 60V/13A, RDS(ON) = 48mW(max.) @ VGS =10V RDS(ON) = 59mW(max.) @ VGS =4.5V · 10.
Manufacture Sinopower
Datasheet
Download SM3325NSQA Datasheet




Sinopower SM3325NSQA
SM3325NSQA
Features
· 60V/13A,
RDS(ON) = 48mW(max.) @ VGS =10V
RDS(ON) = 59mW(max.) @ VGS =4.5V
· 100% UIS + Rg Tested
· ESD Protection
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
SSSG
DFN3x3A-8_EP
(5,6,7,8)
DD DD
Applications
· DC-DC Converter.
· Motor Control.
· Power Tools.
· Load Switching.
Ordering and Marking Information
(4) G
S SS
( 1, 2, 3 )
N-Channel MOSFET
SM3325NS
SM3325NS QA :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3325N
XXXXX
Package Code
QA : DFN3x3A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2017
1
www.sinopowersemi.com



Sinopower SM3325NSQA
SM3325NSQA
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
60
V
±20
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
6A
ID Continuous Drain Current
IDM a Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
13
8.5 A
52
PD Maximum Power Dissipation
TC=25°C
TC=100°C
17.3
W
6.9
RqJC Thermal Resistance-Junction to Case
7.2 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
3.9
A
3.1
PD Maximum Power Dissipation
RqJA c Thermal Resistance-Junction to Ambient
IAS b Avalanche Current, Single pulse
TA=25°C
TA=70°C
Steady State
L=0.5mH
1.47
W
0.94
85 °C/W
8A
EAS b Avalanche Energy, Single pulse
L=0.5mH
16 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2017
2
www.sinopowersemi.com



Sinopower SM3325NSQA
SM3325NSQA
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
Test Conditions
VGS=0V, IDS=250mA
VDS=48V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=8A
VGS=4.5V, IDS=6A
ISD=8A, VGS=0V
ISD=8A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
VDS=30V, VGS=4.5V,
IDS=8A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=8A
Note dPulse test ; pulse width £ 300 ms, duty cycle £ 2%.
Note eGuaranteed by design, not subject to production testing.
Min.
60
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
- -V
-1
- 30 mA
2 3V
- ±10 mA
40 48 mW
45 59 mW
0.8 1.3 V
21 - ns
23 - nC
2.8 - W
540 702
56 - pF
26 -
10 18
6 11
ns
21 38
59
5.5 -
11.5 16
2.2 -
2.0 -
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2017
3
www.sinopowersemi.com







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