N-Channel MOSFET. SM3415NHQA Datasheet

SM3415NHQA MOSFET. Datasheet pdf. Equivalent

SM3415NHQA Datasheet
Recommendation SM3415NHQA Datasheet
Part SM3415NHQA
Description N-Channel MOSFET
Feature SM3415NHQA; SM3415NHQA ® N-Channel Enhancement Mode MOSFET Features · 40V/20A, RDS(ON) = 9mW(max.) @ VGS =10V .
Manufacture Sinopower
Datasheet
Download SM3415NHQA Datasheet




Sinopower SM3415NHQA
SM3415NHQA
®
N-Channel Enhancement Mode MOSFET
Features
· 40V/20A,
RDS(ON) = 9mW(max.) @ VGS =10V
RDS(ON) = 12mW(max.) @ VGS =4.5V
· 100% UIS + Rg Tested
· ESD Protection
· Reliable and Rugged
· Lower Qg and Qgd for high-speed switching
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DDDD
SS SG
DFN3.3x3.3A-8_EP
(5,6,7,8)
DD DD
Applications
(4) G
· Power Management in DC/DC Converter.
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM3415NH
SM3415NH QA :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3415N
XXXXX
Package Code
QA : DFN3.3x3.3A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - September, 2016
1
www.sinopowersemi.com



Sinopower SM3415NHQA
SM3415NHQA
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
40
V
±20
TJ
TSTG
IS
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
150
-55 to 150
20 a
°C
ID Continuous Drain Current
TC=25°C
TC=100°C
20 a A
20 a
PD Maximum Power Dissipation
TC=25°C
TC=100°C
27.7
W
11.1
RqJC Thermal Resistance-Junction to Case
Steady State
4.5 °C/W
ID Continuous Drain Current
IDM Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
10.4
8.3
40 b
A
PD Maximum Power Dissipation
TA=25°C
TA=70°C
1.67
W
1.07
RqJA Thermal Resistance-Junction to Ambient
t £ 10s
Steady State c
36
°C/W
75
IAS d Avalanche Current, Single pulse
L=0.1mH
19 A
EAS d Avalanche Energy, Single pulse
L=0.1mH
18.05
mJ
Note aMax. continuous current is limited by bonding wire.
Note bPulse width is limited by maximum junction temperature.
Note cSurface Mounted on 1in2 pad area, t £ 999s.
Note dUIS tested and pulse width is limited by maximum junction temperature 150oC (initial temperature TJ = 25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - September, 2016
2
www.sinopowersemi.com



Sinopower SM3415NHQA
SM3415NHQA
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VGS=0V, IDS=250mA
VDS=32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=12A
TJ=125°C
VGS=4.5V, IDS=7A
VDS=5V, IDS=7A
ISD=12A, VGS=0V
IF=12A, dlSD/dt=100A/ms
40
-
-
1.4
-
-
-
-
-
-
-
-
-
-
RG Gate Resistance
VGS=0V,VDS=0V, F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=20V,
Frequency=1.0MHz
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VDD=20V, RL=20W,
IDS=1A, VGEN=10V,
RG=1W
Qg Total Gate Charge
Qg Total Gate Charge
VDS=20V, VGS=4.5V,
IDS=12A
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=20V, VGS=10V,
IDS=12A
Qgd Gate-Drain Charge
Note ePulse test; pulse width £ 300 ms, duty cycle £ 2%.
Note fGuaranteed by design, not subject to production testing.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.7
-
7.2
9.9
9
20
0.8
20.1
11.4
8.7
11.9
1
770
230
30
8.5
7.3
17.8
12.1
6
12.7
1.4
2.3
1.5
Max. Unit
-V
1
mA
30
2.5 V
±10 mA
9
- mW
12
-S
1.1 V
-
- ns
-
- nC
2W
-
- pF
-
16
14
ns
24
23
8.4
18
- nC
-
-
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - September, 2016
3
www.sinopowersemi.com







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