N-Channel MOSFET. SM2290NSQG Datasheet

SM2290NSQG MOSFET. Datasheet pdf. Equivalent

SM2290NSQG Datasheet
Recommendation SM2290NSQG Datasheet
Part SM2290NSQG
Description N-Channel MOSFET
Feature SM2290NSQG; SM2290NSQG Features · 150V/1.6A, RDS(ON) = 360mW(max.) @ VGS =10V · ESD Protection · 100% UIS Tested.
Manufacture Sinopower
Datasheet
Download SM2290NSQG Datasheet




Sinopower SM2290NSQG
SM2290NSQG
Features
· 150V/1.6A,
RDS(ON) = 360mW(max.) @ VGS =10V
· ESD Protection
· 100% UIS Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDS
D
D DG
S
DFN2x2A-6_EP
(1,2,5,6)
DD DD
Pin 1
Applications
· For POE Power Primary Side Switch for
Low.
· Power DC/DC Converters.
(3)G
(4)S
N-Channel MOSFET
Ordering and Marking Information
SM2290NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QG : DFN2x2A-6_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM2290NS QG :
2290A
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
1
www.sinopowersemi.com



Sinopower SM2290NSQG
SM2290NSQG
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VD SS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID Continuous Drain Current
IDM a Pulsed Drain Current
PD Maximum Power Dissipation
RqJA c Thermal Resistance-Junction to Ambient
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t £ 10s
Steady State
150
±25
150
-55 to 150
1.6
1.6
1.3
6
2.5
1.6
50
95
V
°C
A
A
A
W
°C/W
°C/W
IAS b Avalanche Current, Single pulse
L=0.5mH
1.6 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
0.6 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC)
Note cSurface mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
2
www.sinopowersemi.com



Sinopower SM2290NSQG
SM2290NSQG
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250mA
VDS=120V, VGS =0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=1.6A
150
-
-
2
-
-
ISD=1.6A, VGS=0V
ISD=1.6A, dlSD/dt=100A/ms
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
-
-
-
-
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=75V, VGS=10V,
IDS=1.6A
Note dPulse test ; pulse width£300ms, duty cycle£2%.
Note eGuaranteed by design, not subject to production testing.
-
-
-
Typ.
-
-
-
3
-
300
0.8
43
65
4
280
27
9
10
7
12
3
6
2
1.4
Max. Unit
-V
1
30 mA
4V
±10 mA
360 mW
1.3 V
- ns
- nC
-W
370
pF
18
13
ns
22
6
9
- nC
-
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
3
www.sinopowersemi.com







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