N-Channel MOSFET. SM7370ESKP Datasheet

SM7370ESKP MOSFET. Datasheet pdf. Equivalent

SM7370ESKP Datasheet
Recommendation SM7370ESKP Datasheet
Part SM7370ESKP
Description Dual N-Channel MOSFET
Feature SM7370ESKP; SM7370ESKP ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 40V/28A, RDS(ON) = 15mW (.
Manufacture Sinopower
Datasheet
Download SM7370ESKP Datasheet




Sinopower SM7370ESKP
SM7370ESKP
®
Dual N-Channel Enhancement Mode MOSFET
Features
· Channel 1
40V/28A,
RDS(ON) = 15mW (max.) @ VGS = 10V
RDS(ON) = 21mW (max.) @ VGS = 4.5V
· Channel 2 (ESD Protection)
40V/30A,
RDS(ON) = 10.2mW (max.) @ VGS =10V
RDS(ON) = 16mW (max.) @ VGS =4.5V
· 100% UIS + Rg Tested
· Dual Dies Package and Minimize Board Space
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
Pin Description
G2S2 S2S2
G1D1D1D1
S1/D2
D1
DFN5x6B-8_EP2
Pin1
D1
(2)(3) (4)
S1/D2
G1 (1)
G2
(8)
S2 (5)(6)(7)
N-Channel MOSFET
Ordering and Marking Information
SM7370ES
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6B-8_EP2
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM7370ES KP :
7370ES
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2016
1
www.sinopowersemi.com



Sinopower SM7370ESKP
SM7370ESKP
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Common Ratings
Parameter
Channel 1 Channel 2 Unit
VDSS Drain-Source Voltage
40 V
VGSS Gate-Source Voltage
±20 ±20 V
TJ Maximum Junction Temperature
150 °C
TSTG Storage Temperature Range
-55 to 150
°C
IS Diode Continuous Forward Current
11 13.6 A
ID Continuous Drain Current
TC=25°C
28 30 a
A
TC=100°C
18
24
PD Maximum Power Dissipation
TC=25°C
TC=100°C
20
8.3
25
W
10
RqJC Thermal Resistance-Junction to Case
Steady State
6
5 °C/W
ID Continuous Drain Current
IDM b Pulse Drain Current
TA=25°C
TA=70°C
TA=25°C
6.6 8.6
A
5.3 6.9
26 34 A
PD Maximum Power Dissipation
TA=25°C
TA=70°C
1.13 1.3
W
0.72 0.83
RqJA c
Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
54
110
48
°C/W
96
IAS d Avalanche Current, Single pulse
L=0.1mH 19 20 A
EAS d Avalanche Energy, Single pulse
L=0.1mH 18 20 mJ
Note aMax. continuous current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
Note cSurface mounted on 1in2 pad area, steady state t=999s.
Note dUIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2016
2
www.sinopowersemi.com



Sinopower SM7370ESKP
SM7370ESKP
®
Channel 1 Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Channel 1
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VGS=0V, IDS=250mA
VDS=32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=10A
TJ=125°C
VGS=4.5V, IDS=8A
VDS=5V, IDS=8A
40
-
-
1.4
-
-
-
-
-
ISD=1A, VGS=0V
IDS=10A, dlSD/dt=100A/ms
VDD=20V
-
-
-
-
-
--
-1
- 30
1.8 2.5
- ±100
12.5 15
20.7 -
15.5 21
22 -
0.75 1.1
14.6 -
10 -
4.6 -
9.4 -
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=20V,
Frequency=1.0MHz
VDD=20V, RL=20W,
IDS=1A, VGEN=10V,
RG=1W
-
-
-
-
-
-
-
-
2.5
820
100
60
10.6
8
20.3
4.6
5
-
-
-
-
-
-
-
Qg Total Gate Charge
VDS=20V, VGS=4.5V,
IDS=10A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=20V, VGS=10V,
IDS=10A
Qgd Gate-Drain Charge
Note ePulse test ; pulse width£300ms, duty cycle£2%.
Note fGuaranteed by design, not subject to production testing.
- 7.7 -
- 15.7 -
- 1.1 -
- 1.9 -
- 3.6 -
Unit
V
mA
V
nA
mW
S
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2016
3
www.sinopowersemi.com







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