N-Channel MOSFET. SM7322EKKP Datasheet

SM7322EKKP MOSFET. Datasheet pdf. Equivalent

SM7322EKKP Datasheet
Recommendation SM7322EKKP Datasheet
Part SM7322EKKP
Description Dual N-Channel MOSFET
Feature SM7322EKKP; SM7322EKKP ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 (ESD Protection) 30V/24A,.
Manufacture Sinopower
Datasheet
Download SM7322EKKP Datasheet




Sinopower SM7322EKKP
SM7322EKKP
®
Dual N-Channel Enhancement Mode MOSFET
Features
· Channel 1 (ESD Protection)
30V/24A,
RDS(ON) = 7mW (max.) @ VGS = 10V
RDS(ON) = 11.5mW (max.) @ VGS = 4.5V
· Channel 2 (Integrated Schottky diode)
30V/40A,
RDS(ON) = 3mW (max.) @ VGS =10V
RDS(ON) = 4mW (max.) @ VGS =4.5V
· 100% UIS + Rg Tested
· Dual Dies Package and Minimize Board Space
· Lower Qg and Qgd for High-Speed Switching
· Lower RDS(ON) to Minimize Conduction Losses
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
· Power Management in Desktop Computer or
DC/DC Converters and for Low-side 5V Driver.
Pin Description
G2S2 S2S2
G1D1D1D1
S1/D2
D1
DFN5x6B-8_EP2
Pin1
D1
(2) (3) (4)
S1/D2
G1 (1)
G2
(8)
S2 (5)(6)(7)
N-Channel MOSFET
Ordering and Marking Information
SM7322EK
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6B-8_EP2
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM7322EK KP :
7322EK
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2016
1
www.sinopowersemi.com



Sinopower SM7322EKKP
SM7322EKKP
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Common Ratings
Parameter
Channel 1 Channel 2 Unit
VDSS Drain-Source Voltage
30 V
VGSS Gate-Source Voltage
±20 ±12 V
TJ Maximum Junction Temperature
150 °C
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
ID Continuous Drain Current
TC=25°C
TC=100°C
-55 to 150
24 a
40 a
24 a
40 a
24 a
40 a
°C
A
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
25
10
50
W
20
RqJC Thermal Resistance-Junction to Case
Steady State
5
2.5 °C/W
ID Continuous Drain Current
IDM b Pulse Drain Current Tested
TA=25°C
9.7
18
A
TA=70°C 7.8 15
TA=25°C
39 72 A
PD Maximum Power Dissipation
TA=25°C
TA=70°C
1.13 1.89
W
0.72 1.21
RqJA c
Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
53
110
34
°C/W
66
IAS d Avalanche Current, Single pulse
L=0.1mH 18 35 A
EAS d Avalanche Energy, Single pulse
L=0.1mH
16.2 61.25 mJ
Note aMax. continuous current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
Note cSurface mounted on 1in2 pad area, steady state t=999s.
Note dUIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2016
2
www.sinopowersemi.com



Sinopower SM7322EKKP
SM7322EKKP
®
Channel 1 Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
Test Conditions
Channel 1
Min. Typ. Max.
BVDSS Drain-Source Breakdown V oltage VGS=0V, IDS=250mA
30 -
-
BVDSSt
Drain-Source
( tra n sie nt)
Breakdown
Voltage VGS=0V, ID(aval)=30A
Tcase=25°C, ttransient=100ns
34
-
-
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=15A
TJ=125°C
VGS=4.5V, IDS=10A
VDS=5V, IDS=10A
-
-
1.3
-
-
-
-
-
ISD=2A, VGS=0V
IDS=15A, dlSD/dt=100A/ms
VDD=15V
-
-
-
-
-
-1
- 30
1.7 2.5
- ±10
5.8 7
8.4 -
8.7 11.5
18 -
0.75
27
12
15
15
1.1
-
-
-
-
RG Gate Resistance
VGS=0V,VDS=0 V,F =1M Hz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 15 V,
Frequenc y=1.0MHz
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
IDS=15A
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
IDS=15A
Qgd Gate-Drain Charge
Note ePulse test ; pulse width£300ms, duty cycle£2%.
Note fGuaranteed by design, not subject to production testing.
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8 1.6
680 -
450 -
34 -
6.6 -
9-
18 -
14 -
6.4
12.5
0.85
1.3
3
-
-
-
-
-
Unit
V
V
mA
V
mA
mW
S
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2016
3
www.sinopowersemi.com







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