P-Channel MOSFET. SM1A35PSU Datasheet

SM1A35PSU MOSFET. Datasheet pdf. Equivalent

SM1A35PSU Datasheet
Recommendation SM1A35PSU Datasheet
Part SM1A35PSU
Description P-Channel MOSFET
Feature SM1A35PSU; SM1A35PSU ® P-Channel Enhancement Mode MOSFET Features • -100V/-18A, RDS(ON)= 90mΩ(max.) @ VGS=-.
Manufacture Sinopower
Datasheet
Download SM1A35PSU Datasheet




Sinopower SM1A35PSU
SM1A35PSU
®
P-Channel Enhancement Mode MOSFET
Features
-100V/-18A,
RDS(ON)= 90m(max.) @ VGS=-10V
R=
DS(ON)
102m(max.)
@
V =-4.5V
GS
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
100% UIS Tested
ESD Protection
HBM ESD protection level pass 8KV
Note : The diode connected between the gate and
source serves only as protection against ESD. No
gate overvoltage rating is implied.
Pin Description
Drain 4
2 3 Source
1 Gate
Top View of TO-252-3
D
G
Applications
Power Management for Industrial DC / DC
Converters.
S
P-Channel MOSFET
Ordering and Marking Information
SM1A35PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM1A35PS U :
SM1A35PS
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2015
1
www.sinopowersemi.com



Sinopower SM1A35PSU
SM1A35PSU
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-100
±20
V
TJ Maximum Junction Temperature
150 °C
TSTG
Storage Temperature Range
-55 to 150
°C
IS Diode Continuous Forward Current
-9 A
IAS a Avalanche Current, Single pulse
L=0.5mH
-16 A
EAS a
Avalanche Energy, Single pulse
L=0.5mH
64 mJ
IDP b Pulse Drain Current Tested
TC=25°C
-74 c
ID Continuous Drain Current
TC=25°C
TC=100°C
-18 A
-11
PD Maximum Power Dissipation
TC=25°C
TC=100°C
62.5
W
25
RθJC Thermal Resistance-Junction to Case
2 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
-3.5
A
-2.8
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.2
W
1.4
RθJA d Thermal Resistance-Junction to Ambient
Steady State
55
°C/W
Note aUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note bPulse width limited by max. junction temperature.
Note cWire limited.
Note dRθJA steady state t=999s. RθJA is measured with the device mounted on 1in2, FR-4 board with 2oz. Copper.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2015
2
www.sinopowersemi.com



Sinopower SM1A35PSU
SM1A35PSU
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VGS=0V, IDS=-250µA
-100
VDS=-80V, VGS=0V
TJ=85°C
-
-
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
-1
-
VGS=-10V, IDS=-9A
-
VGS=-4.5V, IDS=-6A
-
ISD=-1A, VGS=0V
ISD=-9A, dlSD/dt=100A/µs
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=-30V,
Frequency=1.0MHz
VDD=-30V, RL=30,
IDS=-1A, VGEN=-10V,
RG=6
-
-
-
-
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-50V, VGS=-10V,
IDS=-9A
Note ePulse test; pulse width300µs, duty cycle2%.
Note fGuaranteed by design, not subject to production testing.
-
-
-
Typ.
-
-
-
-2
-
70
75
-0.7
38
65
5
1780
120
68
11
9
50
22
39
6.3
7.9
Max.
-
1
-30
-3
±20
90
102
-1
-
-
10
2314
-
-
20
16
90
40
55
-
-
Unit
V
µA
V
µA
m
m
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2015
3
www.sinopowersemi.com







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