P-Channel MOSFET. SM4027PSF Datasheet

SM4027PSF MOSFET. Datasheet pdf. Equivalent

SM4027PSF Datasheet
Recommendation SM4027PSF Datasheet
Part SM4027PSF
Description P-Channel MOSFET
Feature SM4027PSF; SM4027PSF P-Channel Enhancement Mode MOSFET Features • -40V/-78A RDS(ON)=8.4mΩ(max.)@VGS=-20V RDS(.
Manufacture Sinopower
Datasheet
Download SM4027PSF Datasheet




Sinopower SM4027PSF
SM4027PSF
P-Channel Enhancement Mode MOSFET
Features
• -40V/-78A
RDS(ON)=8.4mΩ(max.)@VGS=-20V
RDS(ON)=9.4mΩ(max.)@VGS=-10V
RDS(ON)=15mΩ(max.)@VGS=-4.5V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS
TO-220
D
Applications
• SMPS Synchronous Rectification
• Load Switch
• DC-DC Conversion
• Or-ing
G
S
P-Channel MOSFET
Ordering and Marking Information
SM4027PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube
Assembly Material
G : Halogen and Lead Free Device
SM4027PS F :
SM4027PS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2018
1
www.sinopowersemi.com



Sinopower SM4027PSF
SM4027PSF
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-40
V
±25
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
-39 A
ID Continuous Drain Current
IDM a Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
-78
-49
-300
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
83
W
33
RqJC Thermal Resistance-Junction to Case
Steady State
1.5 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
-12
A
-9
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2
1.28
W
RqJA Thermal Resistance-Junction to Ambient
Steady State
62.5
°C/W
IAS b Avalanche Current, Single pulse
L=0.5mH
-21 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
110 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2018
2
www.sinopowersemi.com



Sinopower SM4027PSF
SM4027PSF
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=-250µA
IDSS Zero Gate Voltage Drain Current
VDS=-32V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
Rc
DS(ON)
Drain-Source On-state Resistance
Diode Characteristics
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-20V, IDS=-25A
VGS=-10V, IDS=-25A
VGS=-4.5V, IDS=-15A
VSD c Diode Forward Voltage
ISD=-1A, VGS=0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics d
ISD=-25A,
dlSD/dt=100A/µs
RG Gate Resistance
VGS=0V,VDS=0V,f=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
VDD=-20V, RL=20Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
Qg Total Gate Charge
VDS=-20V, VGS=-4.5V,
IDS=-25A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-20V, VGS=-10V,
IDS=-25A
Note cPulse test ; pulse width300µs, duty cycle2%.
Note dGuaranteed by design, not subject to production testing.
Min.
-40
-
-
-1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
- -V
- -1
µA
- -30
-2.0 -2.5 V
- ±10 µA
7 8.4
7.9 9.4
11.5 15
-0.7 -1.1 V
29 - ns
18 - nC
3.2
2780
426
331
13
11
94
48
-
3614
-
-
24
20
170
87
Ω
pF
ns
32 -
63 88 nC
10.2 -
17.3 -
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2018
3
www.sinopowersemi.com







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