P-Channel MOSFET. SM2661PSC Datasheet

SM2661PSC MOSFET. Datasheet pdf. Equivalent

SM2661PSC Datasheet
Recommendation SM2661PSC Datasheet
Part SM2661PSC
Description P-Channel MOSFET
Feature SM2661PSC; SM2661PSC ® P-Channel Enhancement Mode MOSFET Features · -60V/-2.9A, RDS(ON)= 135mW(max.) @ VGS=-1.
Manufacture Sinopower
Datasheet
Download SM2661PSC Datasheet




Sinopower SM2661PSC
SM2661PSC
®
P-Channel Enhancement Mode MOSFET
Features
· -60V/-2.9A,
RDS(ON)= 135mW(max.) @ VGS=-10V
RDS(ON)= 180mW(max.) @ VGS=-4.5V
· ESD Protection Pass 2KV
· 100% UIS+Rg Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S
D
D
G
D
D
Top View of SOT-23-6
(1,2,5,6)
DD DD
Applications
· DC-DC Converters.
· Load Switch.
· Power Management.
(3)G
(4)S
P-Channel MOSFET
Ordering and Marking Information
SM2661PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
C : SOT-23-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM2661PS C : D61XX
XX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2016
1
www.sinopowersemi.com



Sinopower SM2661PSC
SM2661PSC
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-60
V
±20
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TA=25°C
-1 A
ID* Continuous Drain Current
IDM a Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
-2.9
-2.3
-11.6
A
A
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2
W
1.3
RqJA c Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
60
°C/W
100
IAS b Avalanche Current, Single pulse
L=0.5mH
7A
EAS b Avalanche Energy, Single pulse
L=0.5mH
12 mJ
Note *t £ 10s.
Note aPulse width is limited by maximum junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2016
2
www.sinopowersemi.com



Sinopower SM2661PSC
SM2661PSC
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics d
VGS=0V, IDS=250mA
VDS=-48V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=-10V, IDS= -2.9A
VGS=-4.5V, IDS= -2.5A
ISD=-1A, VGS=0V
ISD=-2.9A,
dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=-30V,
Frequency=1.0MHz
VDD=-30V, RL=-30W,
IDS=-1A, VGEN=-10V,
RG=6W
Qg Total Gate Charge
VDS=-30V, VGS=-4.5V,
IDS=-2.9A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-30V, VGS=-10V,
IDS=-2.9A
Note dPulse test; pulse width£300ms, duty cycle£2%.
Note eGuaranteed by design, not subject to production testing.
Min.
-60
-
-
-1
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-2
-
110
130
-0.8
20
19
11
430
41
25
8.5
5.8
36
24
5.4
11
1.4
2.4
Max. Unit
-V
1
30 mA
-3 V
±10 mA
135 mW
180 mW
-1 V
- ns
- nC
-W
560
- pF
-
16
11
ns
65
44
-
15.4 nC
-
-
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2016
3
www.sinopowersemi.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)