P-Channel MOSFET. SM6105PSK Datasheet

SM6105PSK MOSFET. Datasheet pdf. Equivalent

SM6105PSK Datasheet
Recommendation SM6105PSK Datasheet
Part SM6105PSK
Description P-Channel MOSFET
Feature SM6105PSK; SM6105PSK Features · -60V/-6.7A , RDS(ON)=21mW(max.) @ VGS=-10V RDS(ON)=27mW(max.) @ VGS=-4.5V · 100.
Manufacture Sinopower
Datasheet
Download SM6105PSK Datasheet




Sinopower SM6105PSK
SM6105PSK
Features
· -60V/-6.7A ,
RDS(ON)=21mW(max.) @ VGS=-10V
RDS(ON)=27mW(max.) @ VGS=-4.5V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
P-Channel Enhancement Mode MOSFET
Pin Description
DD DD
S
S
S
G
Top View of SOP - 8
( 5,6,7,8 )
D D DD
Applications
· DC/DC Converter.
· Power Management.
· Load Switch.
· For Motor Drive Application.
(4)
G
SSS
(1, 2, 3)
P-Channel MOSFET
Ordering and Marking Information
SM6105PS
Assembly Material
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel
Assembly Material
G: Halogen and Lead Free Device
SM6105PS K :
6105PS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
1
www.sinopowersemi.com



Sinopower SM6105PSK
SM6105PSK
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-60
±20 V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TA=25°C
-3 A
ID Continuous Drain Current
IDM a Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
-6.7
-5.4 A
-27
PD Maximum Power Dissipation
TA=25°C
TA=70°C
1.78
W
1.14
RqJA c Thermal Resistance-Junction to Ambient
Steady State
70 °C/W
IAS b Avalanche Current, Single pulse
L=0.5mH
-25 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
156 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
2
www.sinopowersemi.com



Sinopower SM6105PSK
SM6105PSK
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS= -250mA
VDS=-48V, VGS=0V
TJ=85°C
VDS=VGS, IDS= -250mA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-6A
VGS=-4.5V, IDS=-4A
ISD=-1A, VGS=0V
ISD=-6A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=-30V,
Frequency=1.0MHz
VDD=-30V, RL=30W,
IDS=-1A, VGEN= -10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-30V, VGS=-10V,
IDS=-6A
Note dPulse test; pulse width£300ms, duty cycle£2%.
Note eGuaranteed by design, not subject to production testing.
Min.
-60
-
-
-1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-1.8
-
17
20
-0.7
36
49
4
2780
282
174
15
10
120
51
62
9
14
Max. Unit
-
1
30
-2.3
±100
21
27
V
mA
V
nA
mW
mW
-1.0 V
- ns
- nC
-
3615
-
-
27
18
215
92
W
pF
ns
87
- nC
-
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
3
www.sinopowersemi.com







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