P-Channel MOSFET. SM1A33PSKP Datasheet

SM1A33PSKP MOSFET. Datasheet pdf. Equivalent

SM1A33PSKP Datasheet
Recommendation SM1A33PSKP Datasheet
Part SM1A33PSKP
Description P-Channel MOSFET
Feature SM1A33PSKP; SM1A33PSKP Features · -100V/-34A, RDS(ON) = 40mW(max.) @ VGS =-10V RDS(ON) = 51mW(max.) @ VGS =-4.5V.
Manufacture Sinopower
Datasheet
Download SM1A33PSKP Datasheet




Sinopower SM1A33PSKP
SM1A33PSKP
Features
· -100V/-34A,
RDS(ON) = 40mW(max.) @ VGS =-10V
RDS(ON) = 51mW(max.) @ VGS =-4.5V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
P-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
( 5,6,7,8 )
D D DD
Pin 1
Applications
· Power Management for Industrial DC / DC
Converters.
(4)
G
SSS
(1, 2, 3)
P-Channel MOSFET
Ordering and Marking Information
SM1A33PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM1A33PS KP :
1A33PS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2017
1
www.sinopowersemi.com



Sinopower SM1A33PSKP
SM1A33PSKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-100
V
±25
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
-17
ID Continuous Drain Current
IDM Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
-34
-22
-136 a
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
96 W
38
RqJC Thermal Resistance-Junction to Case
Steady State
1.3 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
-5 A
-4
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.08
W
1.33
RqJA b Thermal Resistance-Junction to Ambient
Steady State
60 °C/W
IAS c Avalanche Current, Single pulse
L=0.5mH
-27 A
EAS c Avalanche Energy, Single pulse
L=0.5mH
182 mJ
Note aPulse width is limited by max. junction temperature.
Note bSurface Mounted on 1in2 pad area.
Note cUIS tested and pulse width are limited by maximum junction temperature 150oC(initial temperature TJ=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2017
2
www.sinopowersemi.com



Sinopower SM1A33PSKP
SM1A33PSKP
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=-250mA
VDS=-80V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250mA
VGS=±25V, VDS=0V
VGS=-10V, IDS=-18A
VGS=-4.5V, IDS=-10A
-100
-
-
-1
-
-
-
ISD=-18A, VGS=0V
ISD=-18A, dlSD/dt=100A/ms
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=-30V,
Frequency=1.0MHz
VDD=-30V, RL=30W,
IDS=-1A, VGEN=-10V,
RG=6W
-
-
-
-
-
-
-
-
Qg Total Gate Charge
VDS=-50V, VGS=-4.5V,
IDS=-18A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-50V, VGS=-10V,
IDS=-18A
Note dPulse test ; pulse width£300ms, duty cycle£2%.
Note eGuaranteed by design, not subject to production testing.
-
-
-
-
Typ.
-
-
-
-2
-
32
38
-0.8
46
103
3.4
2467
268
126
17
9
83
34
27
56
9.5
14.5
Max.
-
-1
-30
-3
±100
40
51
-1.1
-
-
6.8
3207
-
-
31
17
150
61
-
78
-
-
Unit
V
mA
V
nA
mW
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2017
3
www.sinopowersemi.com







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