Recovery Diode. VS-EBU15006-F4 Datasheet

VS-EBU15006-F4 Diode. Datasheet pdf. Equivalent

VS-EBU15006-F4 Datasheet
Recommendation VS-EBU15006-F4 Datasheet
Part VS-EBU15006-F4
Description Ultrafast Soft Recovery Diode
Feature VS-EBU15006-F4; www.vishay.com VS-EBU15006-F4 Vishay Semiconductors FRED Pt® Ultrafast Soft Recovery Diode, 150 A .
Manufacture Vishay
Datasheet
Download VS-EBU15006-F4 Datasheet




Vishay VS-EBU15006-F4
www.vishay.com
VS-EBU15006-F4
Vishay Semiconductors
FRED Pt® Ultrafast Soft Recovery Diode, 150 A
PowerTab®
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
PowerTab®
150 A
600 V
1.08 V
50 ns
175 °C
Single die
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• Designed and qualified
JEDEC®-JESD 47
• PowerTab® package
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
VR
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 89 °C
TC = 25 °C
MAX.
600
150
1200
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 200 μA
IF = 150 A
Forward voltage
VF IF = 150 A, TJ = 125 °C
IF = 150 A, TJ = 175 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 600 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.27
1.15
1.08
-
-
70
3.5
MAX. UNITS
-
1.63
1.43
1.32
8
0.5
-
-
V
μA
mA
pF
nH
Revision: 16-Jun-15
1 Document Number: 94907
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-EBU15006-F4
www.vishay.com
VS-EBU15006-F4
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 50 A
VR = 200 V
dIF/dt = 200 A/μs
TJ = 125 °C
- 50
- 40
- 100
- 210
- 10.5
- 22
- 550
- 2350
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
RthJC
RthCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style PowerTab®
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.35
0.2 -
- 5.02
0.18
-
2.4
-
(20)
EBU15006
UNITS
K/W
g
oz.
kgf · cm
(lbf · in)
Revision: 16-Jun-15
2 Document Number: 94907
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-EBU15006-F4
www.vishay.com
1000
100 TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.0 0.5 1.0 1.5 2.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
VS-EBU15006-F4
Vishay Semiconductors
1000
100
10
175 °C
150 °C
125 °C
1
0.1
25 °C
0.01
0.001
0.0001
0
100 200 300 400 500 600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10
1
0 100 200 300 400 500 600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.5
0.1 D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1E+00
Revision: 16-Jun-15
3 Document Number: 94907
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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