NPN TRANSISTOR. KTC4512 Datasheet

KTC4512 TRANSISTOR. Datasheet pdf. Equivalent

KTC4512 Datasheet
Recommendation KTC4512 Datasheet
Part KTC4512
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature KTC4512; SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌRecommended for 30Wᴕ35W Aud.
Manufacture KEC
Datasheet
Download KTC4512 Datasheet




KEC KTC4512
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 30W35W Audio Frequency
Amplifier Output Stage.
Complementary to KTA1726.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
80
80
6
6
3
50
150
-55150
UNIT
V
V
V
A
A
W
KTC4512
EPITAXIAL PLANAR NPN TRANSISTOR
A
R
S
D
T
L
CC
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
fT
Collector Output Capacitance
Cob
Note : hFE Classification R:55~110, O:80~160.
TEST CONDITION
VCB=80V, IE=0
VEB=6V, IC=0
IC=25mA, IB=0
VCE=4V, IC=2A
IC=2A, IB=0.2A
VCE=12V, IC=0.5A
VCB=10V, IE=0, f=1MHz
MIN.
-
-
80
55
-
-
-
TYP.
-
-
-
-
-
20
150
MAX.
10
10
-
160
0.5
-
-
UNIT
A
A
V
V
MHz
pF
1999. 6. 24
Revision No : 0
1/3



KEC KTC4512
KTC4512
I C - VCE
6
I B=200mIAB=150mA
I B=100mA
I B=80mA
4 I B=50mA
I B =30mA
2 I B=20mA
I B=10mA
0
0 1234
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IB
3
2
1
IC =6A
0
I C=2A
IC =4A
0 0.5 1.0 1.5
BASE CURRENT I B (A)
6
VCE =4V
4
I C - V BE
2
0
012
BASE-EMITTER VOLTAGE VBE (V)
1k VCE =4V
500
300
100
50
30
h FE - I C
Tc=125 C
Tc=25 C
Tc=-30 C
10
0.01
0.03 0.1 0.3 1
3
COLLECTOR CURRENT IC (A)
10
1999. 6. 24
Revision No : 0
1k VCE =4V
500
300
h FE - IC
100 Tc=125 C
50 Tc=25 C
30 Tc=-30 C
10
0.01
0.03 0.1 0.3
1
3
COLLECTOR CURRENT IC (A)
10
r th - t w
10 CURVES SHOULD BE APPLIED IN
5
THERMA LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
3
1 NO HEAT SINK
0.5
0.3
0.1
1 3 10 30 100 300 1000
PULSE WIDTH t w (sec)
2/3



KEC KTC4512
KTC4512
fT - IE
30 VCE =-12V
20 TcT=c1=T225c5=C-C30 C
10
0
-0.01
-0.03 -0.1 -0.3 -1
-3
EMITTER CURRENT I E (A)
-10
50
40
30
20
10
0
0
Pc - Ta
(1)Tc=Ta
INFINITE HEAT SINK
(2)NO NEAT SINK
(1)
(2)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
SAFE OPERATING AREA
30 IC MAX.(PULSED)*
10ms*
10
100ms*
5
3
1
DC(Tc=25 C)
0.5
0.3
*SINGLE NONREPETITIVE
PULSE Tc=25 C
0.1
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.05 IN TEMPERATURE
3 10 30
100
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
1999. 6. 24
Revision No : 0
3/3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)