TO-220F MOSFET. SW4N80B Datasheet

SW4N80B MOSFET. Datasheet pdf. Equivalent

SW4N80B Datasheet
Recommendation SW4N80B Datasheet
Part SW4N80B
Description N-channel TO-220F MOSFET
Feature SW4N80B; SAMWIN SW4N80B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ G.
Manufacture Samwin
Datasheet
Download SW4N80B Datasheet




Samwin SW4N80B
SAMWIN
SW4N80B
N-channel TO-220F MOSFET
Features
High ruggedness
RDS(ON) (Max 4)@VGS=10V
Gate Charge (Typical 14nC)
Improved dv/dt Capability
100% Avalanche Tested
TO-220F
TO-251N
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 800V
ID : 4A
RDS(ON) : 4ohm
2
1
3
Order Codes
Item Sales Type
1 SW F 4N80B
2 SW I 4N80B
Absolute maximum ratings
Marking
SW4N80
SW4N80
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-220F
TO-251N
Packaging
TUBE
TUBE
Value
TO-220F
TO-251N
800
4*
2.5*
16
±30
222.9
26.6
4.5
41.65
252.13
0.33 2.02
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
TO-220F
TO-251N
3.01 0.50
--
45.70
82.06
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5



Samwin SW4N80B
SAMWIN
SW4N80B
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VDS=800V, VGS=0V
VDS=640V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 2A
VDS = 20 V, ID = 2 A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=400V, ID=4.0A, RG=25
(note 4,5)
VDS=640V, VGS=10V, ID=4.0A
(note 4,5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
VSD Diode forward voltage drop.
Trr Reverse recovery time
Qrr Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=4.0A, VGS=0V
IS=4.0A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L =27.9mH, IAS = 4.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 4.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
800
2.0
1.7
Min.
Typ. Max. Unit
V
0.87
V/oC
1
50
100
-100
uA
uA
nA
nA
4.0 V
3.2 4.0
S
520
65 pF
15
10 26
23 55
ns
25 80
24 80
14 40
3.5 nC
6
Typ.
394
2.6
Max.
4.0
16.0
1.5
Unit
A
A
V
ns
uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
2/5



Samwin SW4N80B
SAMWIN
Fig. 1. On-state characteristics
SW4N80B
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
3/5







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