|
|
Planar Transistor. SD13003 Datasheet |
|
|
|
SD13002 / SD13003
NPN Silicon Epitaxial Planar Transistor
for power switching and electron rectifier
applications.
These transistors are subdivided into one group
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92L Plastic Package
Weight approx. 0.38g
Absolute Maximum Ratings (T a = 25oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Ts
Value
13002
13003
600
400
9
1 1.5
1.15
1.25
150
-55~+150
G S P FORM A IS AVAILABLE
Unit
V
V
V
A
W
OC
OC
РАДИОТЕХ
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®
|
SD13002 / SD13003
Characteristics at Tamb=25 OC
DC Current Gain
at VCE=10V, IC=100mA
Collector Base Breakdown Voltage
at IC=1mA
at IC=5mA
Collector Emitter Breakdown Voltage
at IC=5mA
Emitter Base Breakdown Voltage
at IE=1mA
Collector Cutoff Current
at VCB=600V
at VCB=700V
Emitter Cutoff Current
at VEB=9V
Collector Emitter Saturation Voltage
at IC=0.1A, IB=20mA
at IC=0.5A, IB=100mA
at IC=0.2A, IB=40mA
Base-Emitter Saturation Voltage
at IC=0.1A, IB=20mA
at IC=0.5A, IB=100mA
at IC=0.2A, IB=40mA
13002
13003
13002
13003
13003
13002
13003
13003
13002
13003
Symbol
hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(sat)
Min.
10
600
400
9
-
-
-
-
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
70
-
-
-
100
100
0.4
0.8
0.8
0.9
1.2
1.1
Unit
V
V
V
nA
µA
V
V
V
V
V
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |