Silicon Transistor. 2SC3149 Datasheet

2SC3149 Transistor. Datasheet pdf. Equivalent

2SC3149 Datasheet
Recommendation 2SC3149 Datasheet
Part 2SC3149
Description NPN Triple Diffused Planar Silicon Transistor
Feature 2SC3149; Production specification NPN Triple Diffused Planar Silicon Transistor FEATURES  High breakdown .
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Datasheet
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GME 2SC3149
Production specification
NPN Triple Diffused Planar Silicon Transistor
FEATURES
High breakdown voltage(VCBO900V).
Fast switching speed.
Pb
Wide ASO.
Lead-free
2SC3149
PPLICATIONS
800V/1.5A Switching Regulator Applications.
TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
900 V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current
1.5 A
ICP Collector Current(Pulse)
5A
IB Base Current
0.8 A
PC Collector Power Dissipation
1.2 W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
V012
Rev.A
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1



GME 2SC3149
Production specification
NPN Triple Diffused Planar Silicon Transistor 2SC3149
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
VCBO
IC=1mA,IE=0
900
V
Collector-emitter breakdown voltage VCEO
IC=5mA,IB=0
800
V
Emitter-base breakdown voltage
VEBO
IE=1mA,IC=0
7
V
Collector-emitter sustain voltage
Collector-emitter sustain voltage
Collector-emitter sustain voltage
Collector cut-off current
VCEO(susu) IC=1.5A,L=1mH,IB=0.5A
VCEX(susu)
VCEX(susu)
IC=0.5A, IB1=0.1A,IB2=-0.1A
L=5mH,clamped
IC=0.25A, IB1=50mA,
IB2=-50mA,L=10mH,clamped
ICBO VCB=800V,IE=0
800
800
900
V
V
V
10 uA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
VEBO=5V,IC=0
VCE=5V,IC=0.1A
VCE=5V,IC=0.5A
IC=300mA,IB=60mA
10 uA
10 40
8
0.5 V
Base-emitter saturation voltage
VBE(sat) IC=0.75A,IB=0.15A
1.5 V
Transition frequency
fT VCE=10V,IC=100mA
15 MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
30 pF
Turn-on time
Storage time
Fall time
ton
tstg
IC=1A,IB1=0.2A,IB2=-0.4A,
RL=400Ω,VCC=400V
tf
1.0 us
3.0 us
0.7 us
CLASSIFICATION OF hFE(1)
Rank
K
Range
10-20
L
15-30
M
20-40
V012
Rev.A
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2



GME 2SC3149
Production specification
NPN Triple Diffused Planar Silicon Transistor 2SC3149
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
V012
Rev.A
www.gmesemi.com
3







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