NPN Transistor. 2SC3303 Datasheet

2SC3303 Transistor. Datasheet pdf. Equivalent

2SC3303 Datasheet
Recommendation 2SC3303 Datasheet
Part 2SC3303
Description Silicon NPN Transistor
Feature 2SC3303; Silicon NPN Epitaxial Type FEATURES  Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A). .
Manufacture GME
Datasheet
Download 2SC3303 Datasheet




GME 2SC3303
Silicon NPN Epitaxial Type
FEATURES
Low collector saturation voltage:
VCE(sat)=0.4V(max)(IC=3A).
High speed switching time:tstg=1us(typ).
Pb
Lead-free
APPLICATIONS
High Current Switching Applications.
DC-DC Converter Applications.
Production specification
2SC3303
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current(DC)
5A
ICP Collector Current(Pulse)
8A
IB Base Current
1A
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
V/(W)013
Rev.A
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1



GME 2SC3303
Production specification
Silicon NPN Epitaxial Type
2SC3303
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
Collector-emitter breakdown voltage VCEO
IC=10mA,IB=0
80
V
Emitter-base breakdown voltage
VEBO
IE=1mA,IC=0
7
V
Collector cut-off current
ICBO VCB=100V,IE=0
1.0 uA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
VEBO=7V,IC=0
VCE=1V,IC=1A
VCE=1V,IC=3A
IC=3A,IB=0.15A
1.0 uA
70 240
40
0.2 0.4 V
Base-emitter saturation voltage
VBE(sat)
IC=3A,IB=0.15A
0.9 1.2 V
Transition frequency
fT VCE=4V,IC=1A
120 MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
80 pF
Y
120-240
V/(W)013
Rev.A
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2



GME 2SC3303
Production specification
Silicon NPN Epitaxial Type
2SC3303
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
V/(W)013
Rev.A
www.gmesemi.com
3







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