512Mb SDRAM. NT5TU32M16EG Datasheet

NT5TU32M16EG SDRAM. Datasheet pdf. Equivalent

NT5TU32M16EG Datasheet
Recommendation NT5TU32M16EG Datasheet
Part NT5TU32M16EG
Description DDR2 512Mb SDRAM
Feature NT5TU32M16EG; DDR2 512Mb SDRAM NT5TU64M8EE / NT5TU32M16EG Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG DDR2.
Manufacture Nanya
Datasheet
Download NT5TU32M16EG Datasheet




Nanya NT5TU32M16EG
DDR2 512Mb SDRAM
NT5TU64M8EE / NT5TU32M16EG
Nanya Technology Corp.
NT5TU64M8EE / NT5TU32M16EG
DDR2 512Mb SDRAM
Features
JEDEC DDR2 Compliant
- Double-data rate on DQs, DQS, DM bus
- 4n Prefetch Architecture
Throughput of valid Commands
- Posted CAS and Additive Latency (AL)
Signal Integrity
- Configurable DS for system compatibility
- Configurable On-Die Termination
Data Integrity
- Auto Refresh and Self Refresh Modes
Power Saving Modes
- Power Down Mode
SSTL_18 compliance and Power Supply
- VDD/VDDQ = 1.70 to 1.90V
Options
Speed Grade ( DataRate/CL-tRCD-tRP)1
- 800 Mbps / 5-5-5
Temperature Range (Tc) 2
- Grade I = - 40to + 95
Programmable functions
Output Drive Impedance (Full, Reduced)
Burst Length (4, 8)
Burst Type (Sequential, Interleaved)
Rtt (50, 75, 150)
CAS Latency (3, 4, 5, 6, 7)
Additive Latency (0, 1, 2, 3, 4, 5, 6)
WR (2, 3, 4, 5, 6, 7, 8)
Density / Packages information
Lead-free RoHS compliance and Halogen-free
Density and Addressing
512Mb
(Org. / Package)
Width x Length Ball pitch
(mm)
(mm)
64 Mb x 8 60 VFBGA 8.00 x 10.00
0.80
32 Mb x 16 84 VFBGA 8.00 x 12.50
0.80
Configuration
Number of Banks
Bank Address
Auto Precharge
Row Address
Column Address
Page Size
64 Mb x 8
4
BA0 BA1
A10/AP
A0 - A13
A0 - A9
1 KB
32 Mb x 16
4
BA0 BA1
A10/AP
A0 - A12
A0 A9
2 KB
Notes:
1. The timing specification of high speed bin is backward compatible with low speed bin.
2. If TC exceeds 85°C, the DRAM must be refreshed externally at 2x refresh. It is required to set tREFI=3.9μs in auto refresh mode and to
set ‘1’ for EMRS (2) bit A7 in self refresh mode.
Version 1.0
09/2014
1
NTC has the rights to change any specifications or product without notification.
Nanya Technology Corp.©
All Rights Reserved



Nanya NT5TU32M16EG
DDR2 512Mb SDRAM
NT5TU64M8EE / NT5TU32M16EG
Major Timing Specifications for Corresponding Bins
Speed Bin
DDR2-800 and DDR2-667
DDR2-8001
DDR2-6671
CL-tRCD-tRP
5-5-5
5-5-5
Parameter
min
max
min
max
tRCD
12.5 -
15
-
tRP 12.5 - 15 -
tRC 57.5 - 60 -
tRAS
tCK(avg), CL=3
45 70K
Option2
45 70K
Option2
tCK(avg), CL=4
3.75
8
3.75
8
tCK(avg), CL=5
2.5
8
3
tCK(avg), CL=6
Option2
Option2
tCK(avg), CL=7
Option2
Option2
Notes
1. The timing specification of high speed bin is backward compatible with low speed bin
DDR2-800 5-5-5 is compatible with DDR2-667 5-5-5.
2. Please confirm with NTC for its availability.
8
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Version 1.0
09/2014
2
Nanya Technology Corp.©
All Rights Reserved



Nanya NT5TU32M16EG
DDR2 512Mb SDRAM
NT5TU64M8EE / NT5TU32M16EG
Ordering Information
Lead-free RoHS compliance and Halogen-free
Organization
64 Mb x 8
Part Number
NT5TU64M8EE-ACI
Grade I
Package
60-Ball BGA
Speed 1
Data Rate(Mbps)
CL-TRCD-TRP
800 5-5-5
32 Mb x 16
NT5TU32M16EG-ACI
84-Ball BGA
800
5-5-5
Notes
1. The timing specification of high speed bin is backward compatible with low speed bin
Version 1.0
09/2014
3
Nanya Technology Corp.©
All Rights Reserved







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