Bridge Rectifier. KBJ5006 Datasheet

KBJ5006 Rectifier. Datasheet pdf. Equivalent

KBJ5006 Datasheet
Recommendation KBJ5006 Datasheet
Part KBJ5006
Description Single-Phase Bridge Rectifier
Feature KBJ5006; SEMICONDUCTOR KBJ50 RRooHHSS Nell High Power Products Single-Phase Bridge Rectifier, 50A KBJ5004 Th.
Manufacture nELL
Datasheet
Download KBJ5006 Datasheet




nELL KBJ5006
SEMICONDUCTOR
KBJ50 RRooHHSS
Nell High Power Products
Single-Phase Bridge Rectifier, 50A
KBJ5004 Thru KBJ5012
20.5
17.5
9.5
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
High heat-conduction rate
Low temperature rise
Weight: 10g (0.35 ozs)
PRIMARY CHARACTERRISTICS
IF(AV)
50A
VRRM
400V to 1200V
IFSM
IR
450A
5 µA
VF 1.10V
TJ max.
150ºC
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nELL KBJ5006
SEMICONDUCTOR
KBJ50 RRooHHSS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
Peak forward surge current single sine-wave superimposed on
rated load
SYMBOL
VRRM
VRSM
VDC
IF(AV)
04
400
500
400
IFSM
06
600
700
600
KBJ50
08
800
900
800
50
450
10
1000
1100
1000
UNIT
12
1200 V
1300 V
1200 V
A
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I2t
VISO
TJ
TSTG
1012
2500
-40 to 150
-40 to 125
A2s
V
ºC
ºC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
04
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
IF = 25A
TA = 25°C
TA = 150°C
VF
IR
KBJ50
06 08 10
1.10
5
500
UNIT
12
V
µA
THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
to heatsink M3
Approximate weight
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
RθJC(1)
04
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M3 screw.
KBJ50
06 08
1.0
10
2.5
10
UNIT
12
°C/W
Nm
g
Device code
KBJ 50 10
3
1 - Module type: “KBJ” Package , 1Ø Bridge
2 - IF(AV) rating:"50" for 50A
3 - Voltage code:code x 100 = VRRM
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nELL KBJ5006
SEMICONDUCTOR
KBJ50 RRooHHSS
Nell High Power Products
On-state current and voltage
100
10
1.0
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Peak on-state voltage (V)
Case temperature vs on-state average current
100
80
60
40
20
0
0
50 100 150
case temperature ()
On-state surge current vs cycles
500
400
300
200
100
0
1
10
Cycles @50Hz
100
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