Power Stage. HT45B0016 Datasheet

HT45B0016 Stage. Datasheet pdf. Equivalent

HT45B0016 Datasheet
Recommendation HT45B0016 Datasheet
Part HT45B0016
Description Wireless Charger Transmitter Power Stage
Feature HT45B0016; HT45B0016 Wireless Charger Transmitter’s Power Stage Features • Integrated Low Side NMOS: RDSON=12.
Manufacture Holtek Semiconductor
Datasheet
Download HT45B0016 Datasheet




Holtek Semiconductor HT45B0016
HT45B0016
Wireless Charger Transmitter’s Power Stage
Features
• Integrated Low Side NMOS: RDSON=12mΩ @
VCC=5V
• Integrated High Side NMOS: RDSON=30mΩ @
VCC=5V
• Integrated OCP function with over current trigger
point adjustable using an external resistor
• Integrated OTP function
• Enable pin (EN) controls the output status
• Package type: 23-pin QFN
General Description
The HT45B0016 is a two-in-one power half-bridge
chip developed by Holtek for wireless charger
applications. The half-bridge power stage with
integrated NMOS, can work with the HT66FW2230
or HT66FW2350 to achieve complete wireless
charger solutions. The VIN input range is 4.5V~25V
covering various wireless charger transmitter
types. The HT45B0016 chip can be flexibly used
in differenct architectures, a single chip for half-
bridge driver LC series resonance and two chips for
full-bridge driver LC series resonance. Combined
with the HT66FW2230 or HT66FW2350 software
arhcitecture, a half-bridge solution can be used for
low power applications while a full-bridge solution
can be used for medium power applications.
The HT45B0016 is supplied in the 23-pin QFN
package type. The PCB layout and other important
information are provided in the following sections.
Pin Assignment
23 22 21 20 19 18
OCSET 1
EN 2
EN 3
AGND 4
PWM 5
VIN 6
24
VIN
25
LX
17 LX
16 LX
15 PGND
14 PGND
13 PGND
12 PGND
78 9
10 11
HT45B0016
23 QFN-A
Order Number
HT45B0016QT1U
Marking
HT45B0016
Temp. Range
-40˚C to +85˚C
Note: QT: QFN4X4-23;
1: Bonding Code;
Green: Lead Free / Halogen Free.
Package (Green)
23QFN (4mm×4mm)
U: Tape & Reel;
Rev. 1.00
1 March 08, 2018



Holtek Semiconductor HT45B0016
HT45B0016
Pin Description
No.
1
2, 3
4
5
6, 7, 8, 9, 22, 24
10, 11, 16, 17, 18, 25
12, 13, 14, 15, 19
20
21
23
Pin Name
Description
OCSET OCP setup; connects a resistor to ground for OCP trigger setup.
EN Enable pin. High=enable; Low=disable. Can not be floating.
AGND Analog ground
PWM Driver PWM input
VIN Power supply
LX
High side and low side MOSFET node. PWM output voltage connects the
output LC resonance circuit.
PGND Power supply ground
BST Boost capacitor connection; externally connects a capacitor to LX.
PVCC Driver power supply
VCC
Analog power supply for internal circuits; connects a bypass capacitor to
AGND.
Absolute Maximum Ratings
VIN to AGND..........................................-0.3V to 30V
VCC to AGND..........................................-0.3V to 6V
PVCC to AGND........................................-0.3V to 6V
EN, OCSET, PWM to AGND...................-0.3V to 6V
BST to PGND..........................................-0.3V to 35V
LX to BST.................................................-6V to 0.3V
Thermal Resistance of Juntion to Ambient, (θJA)
QFN4X4-23..................................................... 25˚C/W
JunctionTemperature. ......................................... 150˚C
Storage Temperature............................ -65˚C to 150˚C
Reflow Temperature (soldering, 10 seconds).....300˚C
Note: These are stress ratings only. Stresses exceeding the range specified under "Absolute Maximum Ratings"
may cause substantial damage to the device. Functional operation of the device at other conditions beyond
those listed in the specification is not implied and prolonged exposure to extreme conditions may affect
devices reliability.
Electrical Characteristics
The device is not guaranteed to function outside its operating conditions. Parameters with Min. and/or Max. limits
are 100% tested at +25˚C, unless otherwise specifed.
Parameter
VIN Input Voltage Range
VCC Input Voltage Range
Quiescent Supply Current (VCC)
Shutdown Current (VCC)
VCC Rising POR Threshold
VCC POR Hysteresis
Zero Current Detect
OCSET Current Source
Thermal Shutdown Threshold
High Side Switch Resistance
Low Side Switch Resistance
PWM Input Logic Threshold
Tri-state Input Rising Logic Threshold
Conditions
VIN
VCC
EN=High, PWM=Low
EN=Low
LX-PGND
Hysteresis=45˚C
BST-LX forced to 5V, VCC=5V
VCC=5V
PWM Rising (VTH_PWM_R)
PWM Falling (VTH_PWM_F)
PWM Rising (VTH_PWM_R)
Hysteresis
Min. Typ. Max. Unit
4.5 — 25 V
4.5 5 5.5 V
— 210 250 μA
——
1 μA
3.7 4.0 4.3
V
150 200 250 mV
-5 —
5 mV
9 10 11 μA
— 145 —
˚C
— 30 —
— 12 —
3.6 3.9 4.1
1.0 1.2 1.4
V
1.0 1.3 1.6
V
140 280 420 mV
Rev. 1.00
2 March 08, 2018



Holtek Semiconductor HT45B0016
HT45B0016
Parameter
Conditions
Tri-state Input Falling Logic Threshold
PWM Falling (VTH_PWM_F)
Hysteresis
Logic Input High Voltage
EN
Logic Input Low Voltage
EN
PWM to High Side Gate (tPD_OFF_DH)
PWM High to Low to DH High to Low
PWM to Low Side Gate (tPD_OFF_DL)
PWM Low to High to DL High to Low
Low to High Side Gate Deadtime (tPD_ON_DH) DL High to Low to DH Low to High
High to Low Side Gate Deadtime (tPD_ON_DL) DH High to Low to DL Low to High
Min.
3.4
85
2.0
Typ.
3.7
170
20
20
20
20
Max.
4.0
255
0.8
Unit
V
mV
V
V
ns
ns
ns
ns
PWM Timing Diagram
EN
PWM
DL
tPD_OFF_DL
tPD_ON_DL
tPD_OFF_DL
DH
tPD_ON_DL
PWM Logic Output vs. EN Status
EN PWM DH
LxL
HHH
HLL
Note: L=Low; H=High; x=Don’t care.
Output Truth Table
DL
L
L
H
Rev. 1.00
3 March 08, 2018







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