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MOSFET Driver. MCP14E7 Datasheet

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MOSFET Driver. MCP14E7 Datasheet






MCP14E7 Driver. Datasheet pdf. Equivalent




MCP14E7 Driver. Datasheet pdf. Equivalent





Part

MCP14E7

Description

2.0A Dual High-Speed Power MOSFET Driver



Feature


MCP14E6/7/8 2.0A Dual High-Speed Power M OSFET Driver With Enable Features • High Peak Output Current: 2.0A (typical ) • Independent Enable Function for E ach Driver Output • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • Low Shoot-Through/Cross-Conduction Current in Output Stage • High Capac itive Load Drive Capability: - tR: 12 n s with 1000 pF load (typical.
Manufacture

Microchip

Datasheet
Download MCP14E7 Datasheet


Microchip MCP14E7

MCP14E7; ) - tF: 15 ns with 1000 pF load (typical ) • Short Delay Times: 45 ns (typical ) • Low Supply Current: - With Logic ‘1’ Input/Enable – 1 mA (typical) - With Logic ‘0’ Input/Enable – 300 µA (typical) • Latch-up Protecte d: Passed JEDEC JESD78A • Logic Input will Withstand Negative Swing, up to 5 V • Space-Saving Packages: - 8-Lead S OIC, PDIP, 6x5 DFN Applications • Switch .


Microchip MCP14E7

Mode Power Supplies • Pulse Transforme r Drive • Line Drivers • Motor and Solenoid Drive General Description The MCP14E6/7/8 devices are high-speed MOS FET drivers, capable of providing 2.0A of peak current. The dual inv .


Microchip MCP14E7

.

Part

MCP14E7

Description

2.0A Dual High-Speed Power MOSFET Driver



Feature


MCP14E6/7/8 2.0A Dual High-Speed Power M OSFET Driver With Enable Features • High Peak Output Current: 2.0A (typical ) • Independent Enable Function for E ach Driver Output • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • Low Shoot-Through/Cross-Conduction Current in Output Stage • High Capac itive Load Drive Capability: - tR: 12 n s with 1000 pF load (typical.
Manufacture

Microchip

Datasheet
Download MCP14E7 Datasheet




 MCP14E7
MCP14E6/7/8
2.0A Dual High-Speed Power MOSFET Driver With Enable
Features
• High Peak Output Current: 2.0A (typical)
• Independent Enable Function for Each Driver
Output
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- tR: 12 ns with 1000 pF load (typical)
- tF: 15 ns with 1000 pF load (typical)
• Short Delay Times: 45 ns (typical)
• Low Supply Current:
- With Logic ‘1’ Input/Enable – 1 mA (typical)
- With Logic ‘0’ Input/Enable – 300 µA (typical)
• Latch-up Protected: Passed JEDEC JESD78A
• Logic Input will Withstand Negative Swing,
up to 5V
• Space-Saving Packages:
- 8-Lead SOIC, PDIP, 6x5 DFN
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP14E6/7/8 devices are high-speed MOSFET
drivers, capable of providing 2.0A of peak current. The
dual inverting, dual non-inverting and complementary
outputs are directly controlled from either TTL or
CMOS (3V to 18V). These devices also feature low
shoot-through current, fast rise/fall times and
propagation delays, which make them ideal for high
switching frequency applications.
The MCP14E6/7/8 devices operate from a 4.5V to 18V
single power supply and can easily charge and
discharge 1000 pF of MOSFET gate capacitance. They
provide low enough impedances, in both the ON and
OFF states, to ensure the MOSFETs’ intended state
will not be affected, even by large transients.
The additional control of the MCP14E6/7/8 outputs is
allowed by the use of separate enable functions. The
ENB_A and ENB_B pins are active-high and are
internally pulled up to VDD. The pins may be left floating
for standard operation.
The MCP14E6/7/8 dual output, 2.0A driver family is
offered in both surface-mount and pin-through-hole
packages with a -40oC to +125oC temperature rating.
The low thermal resistance of the thermally enhanced
DFN package allows greater power dissipation
capability for driving heavier capacitive or resistive
loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
The devices are fully latch-up protected when tested
according to JEDEC JESD78A. All terminals are fully
protected against Electrostatic Discharge (ESD), up to
4 kV (HBM) or 400V (MM).
© 2011 Microchip Technology Inc.
DS25006A-page 1




 MCP14E7
MCP14E6/7/8
Package Types
MCP14E7
MCP14E6
PDIP, SOIC
MCP14E8
ENB_A 1
IN A 2
GND 3
IN B 4
8 ENB_B ENB_B ENB_B
7 OUT A OUT A OUT A
6 VDD
VDD
VDD
5 OUT B OUT B OUT B
ENB_A 1
IN A 2
GND 3
IN B 4
6x5 DFN*
EP
9
MCP14E7
MCP14E6
MCP14E8
8 ENB_B
7 OUT A
6 VDD
5 OUT B
ENB_B
OUT A
VDD
OUT B
ENB_B
OUT A
VDD
OUT B
* Includes Exposed Thermal Pad (EP); see Table 3-1.
Functional Block Diagram(1)
VDD
Internal
Pull-up
Enable
Inverting
Non-Inverting
VDD
Output
Input
Effective
Input C = 20 pF
(Each Input)
GND
4.7 V
4.7 V
MCP14E6 Dual Inverting
MCP14E7 Dual Non-Inverting
MCP14E8 One Inverting, One Non-Inverting
Note 1: Unused inputs should be grounded.
DS25006A-page 2
© 2011 Microchip Technology Inc.




 MCP14E7
MCP14E6/7/8
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (VDD + 0.3V) to (GND – 5V)
Enable Voltage .............................(VDD + 0.3V) to (GND - 5V)
Input Current (VIN>VDD)................................................50 mA
Package Power Dissipation (TA = +50oC)
8L-DFN ........................................................................ Note 3
8L-PDIP ........................................................................1.12W
8L-SOIC .....................................................................669 mW
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating
conditions for extended periods may affect device
reliability.
DC CHARACTERISTICS(2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V VDD 18V.
Parameters
Sym
Min Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
VIH
VIL
IIN
VIN
2.4
1.5 —
V
1.3 0.8
V
-1 — 1 µA 0V VIN VDD
-5 — VDD + 0.3 V
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Switching Time(1)
VOH
VOL
ROH
ROL
IPK
VDD – 0.025
5
5
2
0.025
8
8
V DC Test
V DC Test
Ω IOUT = 10 mA, VDD = 18V
Ω IOUT = 10 mA, VDD = 18V
A VDD = 18V(2)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
tR — 12 30 ns Figure 4-1, Figure 4-2,
CL = 1000 pF
tF — 15 35 ns Figure 4-1, Figure 4-2,
CL = 1000 pF
tD1 — 45 55 ns Figure 4-1, Figure 4-2
tD2 — 45 55 ns Figure 4-1, Figure 4-2
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
VEN_H
2.4
1.6 —
V VDD = 12V, Low-to-High Transition
Low-Level Input Voltage
VEN_L
1.2 0.8
V VDD = 12V, High-to-Low Transition
Hysteresis
Enable Pull-up Impedance
Enable Pin Leakage Current
VHYST
RENBL
IENBL
0.7
400 — mV
1.6 3.0 MΩ VDD = 14V, ENBL = GND
10 — µA VDD = 12V,
ENB_A = ENB_B = GND
Propagation Delay Time
tD3 — 35 65 ns VDD = 12V, Figure 4-3
Propagation Delay Time
tD4 — 35 65 ns VDD = 12V, Figure 4-3
Note 1: Switching times are ensured by design.
2: Tested during characterization, not production tested.
3: Package power dissipation is dependent on the copper pad area of the PCB.
© 2011 Microchip Technology Inc.
DS25006A-page 3



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