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MOSFET Drivers. MCP14E4 Datasheet

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MOSFET Drivers. MCP14E4 Datasheet






MCP14E4 Drivers. Datasheet pdf. Equivalent




MCP14E4 Drivers. Datasheet pdf. Equivalent





Part

MCP14E4

Description

4.0A Dual High-Speed Power MOSFET Drivers



Feature


MCP14E3/MCP14E4/MCP14E5 4.0A Dual High- Speed Power MOSFET Drivers With Enable Features • High Peak Output Current: 4.0A (typical) • Independent Enable Function for Each Driver Output • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capabili ty: - 2200 pF in 15 ns (typi.
Manufacture

Microchip

Datasheet
Download MCP14E4 Datasheet


Microchip MCP14E4

MCP14E4; cal) - 5600 pF in 26 ns (typical) • Sh ort Delay Times: 50 ns (typical) • La tch-Up Protected: Will Withstand 1.5A R everse Current • Logic Input Will Wit hstand Negative Swing Up To 5V • Spac e-Saving Packages: - 8-Lead 6x5 DFN, PD IP, SOIC Applications • Switch Mode P ower Supplies • Pulse Transformer Dri ve • Line Drivers • Motor and Solen oid Drive General Description The.


Microchip MCP14E4

MCP14E3/MCP14E4/MCP14E5 devices are a f amily of 4.0A buffers/MOSFET drivers. D ual-inverting, dual-noninvertering, and complementary outputs are standard log ic options offered. The MCP14E3/MCP14E4 /MCP14E5 drivers are capable of operat .


Microchip MCP14E4

.

Part

MCP14E4

Description

4.0A Dual High-Speed Power MOSFET Drivers



Feature


MCP14E3/MCP14E4/MCP14E5 4.0A Dual High- Speed Power MOSFET Drivers With Enable Features • High Peak Output Current: 4.0A (typical) • Independent Enable Function for Each Driver Output • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capabili ty: - 2200 pF in 15 ns (typi.
Manufacture

Microchip

Datasheet
Download MCP14E4 Datasheet




 MCP14E4
MCP14E3/MCP14E4/MCP14E5
4.0A Dual High-Speed Power MOSFET Drivers With Enable
Features
• High Peak Output Current: 4.0A (typical)
• Independent Enable Function for Each Driver
Output
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns (typical)
- 5600 pF in 26 ns (typical)
• Short Delay Times: 50 ns (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• Space-Saving Packages:
- 8-Lead 6x5 DFN, PDIP, SOIC
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP14E3/MCP14E4/MCP14E5 devices are a
family of 4.0A buffers/MOSFET drivers. Dual-inverting,
dual-noninvertering, and complementary outputs are
standard logic options offered.
The MCP14E3/MCP14E4/MCP14E5 drivers are
capable of operating from a 4.5V to 18V single power
supply and can easily charge and discharge 2200 pF
gate capacitance in under 15 ns (typical). They provide
low impedance in both the ON and OFF states to
ensure the MOSFET’s intended state will not be
affected, even by large transients. The MCP14E3/
MCP14E4/MCP14E5 inputs may be driven directly
from either TTL or CMOS (2.4V to 18V).
Additional control of the MCP14E3/MCP14E4/
MCP14E5 outputs is allowed by the use of separate
enable functions. The ENB_A and ENB_B pins are
active high and are internally pulled up to VDD. The pins
maybe left floating for standard operation.
The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A
driver family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
temperature rating. The low thermal resistance of the
thermally enhanced DFN package allows for greater
power dissipation capability for driving heavier
capacitive or resistive loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
1.5A of reverse current being forced back into their
outputs. All terminals are fully protect against
Electrostatic Discharge (ESD) up to 4 kV.
Package Types
8-Pin
MCP14E4
PDIP/SOIC MCP14E3
MCP14E5
ENB_A 1
IN A 2
GND 3
IN B 4
8 ENB_B ENB_B ENB_B
7 OUT A
6 VDD
5 OUT B
OUT A
VDD
OUT B
OUT A
VDD
OUT B
ENB_A
IN A
GND
IN B
8-Pin
6x5 DFN (1)
MCP14E4
MCP14E3
MCP14E5
ENB_B
OUT A
VDD
OUT B
ENB_B
OUT A
VDD
OUT B
ENB_B
OUT A
VDD
OUT B
Note 1: Exposed pad of the DFN package is electrically isolated.
© 2008 Microchip Technology Inc.
DS22062B-page 1




 MCP14E4
MCP14E3/MCP14E4/MCP14E5
Functional Block Diagram
Inverting
VDD
Internal
Pull-up
Enable
Non-inverting
Input
Effective
Input C = 20 pF
(Each Input)
GND
4.7 V
4.7 V
MCP14E3 Dual Inverting
MCP14E4 Dual Noninverting
MCP14E5 One Inverting, One Noninverting
VDD
Output
DS22062B-page 2
© 2008 Microchip Technology Inc.




 MCP14E4
MCP14E3/MCP14E4/MCP14E5
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (VDD + 0.3V) to (GND – 5V)
Enable Voltage .............................(VDD + 0.3V) to (GND - 5V)
Input Current (VIN>VDD)................................................50 mA
Package Power Dissipation (TA = 50°C)
8L-DFN ....................................................................... Note 3
8L-PDIP ........................................................................1.10W
8L-SOIC .....................................................................665 mW
Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V VDD 18V.
Parameters
Sym Min Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
VIH
VIL
IIN
VIN
2.4
1.5 —
V
1.3 0.8
V
–1 — 1 µA 0V VIN VDD
-5 — VDD+0.3 V
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
VOH
VOL
ROH
ROL
IPK
IREV
VDD – 0.025
2.5
2.5
4.0
>1.5
tR — 15
Fall Time
tF — 18
Propagation Delay Time
tD1
Propagation Delay Time
tD2
Enable Function (ENB_A, ENB_B)
— 46
— 50
0.025
3.5
3.0
30
30
55
55
V DC Test
V DC Test
Ω IOUT = 10 mA, VDD = 18V
Ω IOUT = 10 mA, VDD = 18V
A VDD = 18V (Note 2)
A Duty cycle 2%, t 300 µs
ns Figure 4-1, Figure 4-2
CL = 2200 pF
ns Figure 4-1, Figure 4-2
CL = 2200 pF
ns Figure 4-1, Figure 4-2
ns Figure 4-1, Figure 4-2
High-Level Input Voltage
VEN_H
1.60
1.90 2.90
V VDD = 12V, LO to HI Transition
Low-Level Input Voltage
VEN_L
1.30
2.20 2.40
V VDD = 12V, HI to LO Transition
Hysteresis
VHYST
0.10
0.30 0.60
V
Enable Leakage Current
IENBL
40
85 115 µA VDD = 12V,
ENB_A = ENB_B = GND
Propagation Delay Time
tD3
Propagation Delay Time
tD4
Note 1: Switching times ensured by design.
60 — ns Figure 4-3 (Note 1)
50 — ns Figure 4-3 (Note 1)
2: Tested during characterization, not production tested.
3: Package power dissipation is dependent on the copper pad area on the PCB.
© 2008 Microchip Technology Inc.
DS22062B-page 3



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