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Power Transistor. 2SD1309 Datasheet

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Power Transistor. 2SD1309 Datasheet






2SD1309 Transistor. Datasheet pdf. Equivalent




2SD1309 Transistor. Datasheet pdf. Equivalent





Part

2SD1309

Description

Silicon NPN Darlington Power Transistor



Feature


isc Silicon NPN Darlington Power Transis tor DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-E mitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Satu ration Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Designed for audio frequency amp.
Manufacture

INCHANGE

Datasheet
Download 2SD1309 Datasheet


INCHANGE 2SD1309

2SD1309; lifier and low-speed switching industria l use. ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃) SYMBOL PARAMETER VALUE UNIT VC BO Collector-Base Voltage 150 V VCE O Collector-Emitter Voltage 100 V V EBO Emitter-Base Voltage 7 V IC Co llector Current 8 A ICM Collector C urrent-peak 12 A IB Base Current C ollector Power Dissipation @TC=25℃ PC Collector Power Dissi.


INCHANGE 2SD1309

pation @Ta=25℃ Tj Junction Temperatu re 0.8 A 40 W 1.5 150 ℃ Tstg S torage Temperature Range -55~150 ℃ 2SD1309 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademar k isc Silicon NPN Darlington Power Tra nsistor ELECTRICAL CHARACTERISTICS TC= 25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Col lector-Emitter Sustaining Vo.


INCHANGE 2SD1309

ltage IC= 30mA; IB= 0 VCE(sat) Collecto r-Emitter Saturation Voltage IC= 3A; IB = 3mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA ICBO Collec tor Cutoff Current VCB= 100V; IE= 0 I EBO Emitter Cutoff Current VEB= 5V; I C= 0 hFE-1 DC Current Gain IC= 3A; V CE= 2V hFE-2 DC Current Gain IC= 5A ; VCE= 2V ton Turn-on Time tstg Sto rage Time tf Fal.

Part

2SD1309

Description

Silicon NPN Darlington Power Transistor



Feature


isc Silicon NPN Darlington Power Transis tor DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-E mitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Satu ration Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Designed for audio frequency amp.
Manufacture

INCHANGE

Datasheet
Download 2SD1309 Datasheet




 2SD1309
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·High DC Current Gain
:hFE= 2000(Min) @ IC= 3A
·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 100V (Min)
·Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V (Max) @ IC= 3A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency amplifier and low-speed
switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
8
A
ICM
Collector Current-peak
12
A
IB
Base Current
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
Tj
Junction Temperature
0.8
A
40
W
1.5
150
Tstg
Storage Temperature Range
-55~150
2SD1309
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SD1309
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 3mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 2V
hFE-2
DC Current Gain
IC= 5A ; VCE= 2V
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A ,RL= 16.7Ω,
IB1= IB2= 3mA,VCC50V
hFE-1 Classifications
M
L
K
2000-5000 3000-7000 5000-15000
2SD1309
MIN TYP.
MAX
UNI
T
100
V
1.5
V
2.0
V
1.0 μA
5
mA
2000
15000
500
1.0
μs
3.5
μs
1.2
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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