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BL5N50

GME

N-Channel Power Mosfet


Description
Production specification N-Channel Enhancement Mode Field Effect Transistor BL5N50 FEATURES  Low on-resistance.  Low leakage current.  High speed switching.  Low gate charge.  Avalanche ratings. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 500 V VGS I...



GME

BL5N50

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