MSP0413W
-40V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application ● Hard swi...
