NCEP6080AG Power MOSFET Datasheet

NCEP6080AG Datasheet, PDF, Equivalent


Part Number

NCEP6080AG

Description

N-Channel Super Trench Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 7 Pages
Datasheet
Download NCEP6080AG Datasheet


NCEP6080AG
http://www.ncepower.com
Pb Free Product
NCEP6080AG
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP6080AG uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =60V,ID =80A
RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ)
RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ)
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
Schematic diagram
Marking and pin assignment
DDDD
DDDD
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ΔVds TESTED!
SSSG
Top View
GSSS
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP6080AG NCEP6080AG
DFN5X6-8L
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
-
Limit
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS
±20
Drain Current-Continuous (Silicon Limited)
ID 80
Drain Current-Continuous(TC=100)
ID (100)
58
Pulsed Drain Current
Maximum Power Dissipation
IDM 320
PD 85
Derating factor
Single pulse avalanche energy (Note 5)
0.68
EAS 400
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
Quantity
-
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Co., Ltd
Page 1
V1.0

NCEP6080AG
http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IGSS
VGS(th)
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
VGS=4.5V, ID=40A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=10V,ID=40A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=30V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=40A
VGS=10V,RG=4.7Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=40A,
Qgs
VGS=10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=80A
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Pb Free Product
NCEP6080AG
1.47 /W
Min Typ Max Unit
60 - V
- - 1 μA
- - ±100 nA
1.0 1.7
- 3.5
- 4.0
40 -
2.4
4.0
5.0
-
V
S
- 4000
- 680
- 23
-
-
-
PF
PF
PF
- 11
-5
- 56
- 12
- 67
- 12
- 8.5
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
--
80
- 48
- 60
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
Page 2
V1.0


Features http://www.ncepower.com Pb Free Product NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080 AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching per formance. Both conduction and switching power losses are minimized due to an e xtremely low combination of RDS(ON) and Qg. This device is ideal for high-freq uency switching and synchronous rectifi cation. General Features ● VDS =60V,I D =80A RDS(ON) < 4.0mΩ @ VGS=10V (Typ: 3.5mΩ) RDS(ON) < 5.0mΩ @ VGS=4.5V (Ty p:4.0mΩ) ● Excellent gate charge x R DS(on) product ● Very low on-resistan ce RDS(on) ● 150 °C operating temper ature ● Pb-free lead plating ● 100% UIS tested Schematic diagram Marking and pin assignment DDDD DDDD Applic ation ● DC/DC Converter ● Ideal for high-frequency switching and synchrono us rectification 100% UIS TESTED! 100% ΔVds TESTED! SSSG Top View GSSS Bott om View Package Marking and Ordering Information Device Marki.
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