CEC3172
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 26A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
G S
56 78 Bottom View
DFN3*3
43 21
ABSOLUTE MAXIMUM RATINGS TA = 25 C u...
