CEM4501
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 8.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V.
-20V, -5.0A, RDS(ON) = 42mΩ @VGS = -4.5V. RDS(ON) = 86mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface m...
